Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-25T16:56:17.609Z Has data issue: false hasContentIssue false
  • English
  • Français

A new generation of power MOSFET based on the conceptof “Floating Islands”

Published online by Cambridge University Press:  15 June 2000

N. Cézac ,
F. Morancho ,
P. Rossel ,
H. Tranduc  and
A. Peyre-Lavigne
N. Cézac*
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
F. Morancho
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
P. Rossel
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
H. Tranduc
Affiliation:
LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
A. Peyre-Lavigne
Affiliation:
MOTOROLA Semiconducteurs SA, avenue du Général Eisenhower, BP 1029, 31023 Toulouse Cedex, France
*
[email protected] [email protected] [email protected] [email protected] [email protected]
Get access

Abstract

In this paper, a new concept called "Floating Islands diode" (FLI-diode) is proposed: the voltage handling capabilityof this new diode is assumed by the association of several PN junctions in series. This concept can be applied to anypower devices (lateral or vertical). An example of vertical power MOSFET based on this concept is presented here: thisnew structure, called "FLIMOSFET", exhibits improved on-state resistance performance when compared to the conventional VDMOSFET. For instance, for a breakdown voltage of 900 volts, the theoretical performance are strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to thesilicon limit). Moreover the specific on-resistance theoretical limits of FLIMOSFET family are determined and comparedto those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET inthe 200 volts-1000 volts breakdown voltage range.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 10 , Issue 3 , June 2000 , pp. 203 - 209
Copyright
© EDP Sciences, 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

B. Jayant Baliga, Modern power devices (Ed. J. Willey & Sons, 1987).
Chang, H.R., Holroyd, F.W., Solid-State Electron. 33, 381 (1990). CrossRef
Ueda, D., Takagi, H., Kano, G., IEEE Trans. Electron Devices 31, 2 (1984). CrossRef
T. Fujihara, Y. Miyasaka, Simulated Superior Performances of Semiconductor Superjunction Devices, Proc. of International Symposium on Power Semiconductor Devices and ICs ISPSD'98, Kyoto, 1998, pp. 423-426.
Fujihara, T., Jpn. J. Appl. Phys. 36, 6254 (1997). CrossRef
G. Deboy, M. März, J.-P. Stengl, J. Tihanyi, H. Weber, A new generation of high voltage MOSFETS breaks the limit line of silicon, Proc. IEDM, 1998.
L. Lorenz, M. März, G. Deboy, COOL MOS - An important milestone towards a new power MOSFET generation, Proc. of Power Conversion, May 1998.
ATLAS II, 2D Device Simulation Framework, User Manual (Silvaco International, 1995).
Sze, S.M., Gibbons, G., Appl. Phys. Lett. 8, 111 (1966). CrossRef
C. Hu, A parametic study of POWER MOSFET's, Record of 1979 IEEE Power Electronics Specialists Conf., 1979, pp. 385-395.