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Improved varistor nonlinearity via sintering and acceptor impurity doping

Published online by Cambridge University Press:  15 September 2000

Y. J. Wang ,
J. F. Wang ,
C. P. Li ,
H. C. Chen ,
W. B. Su ,
W. L. Zhong ,
P. L. Zhang  and
L. Y. Zhao
Y. J. Wang*
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
J. F. Wang
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
C. P. Li
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
H. C. Chen
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
W. B. Su
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
W. L. Zhong
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
P. L. Zhang
Affiliation:
Physics Department of Shandong University, Jinan Shandong 250100, P.R. China
L. Y. Zhao
Affiliation:
The Thunder Defense Center of Shandong, Jinan Shandong 250100, P.R. China
*
[email protected]
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Abstract

A new varistor system of SnO2-Bi2O3-Nb2O5 was reported in this paper. Theelectrical field-current density characteristics of this system were investigated by doping different amounts of Bi2O3 and sintering the samples at various temperatures. It is found thatadding 0.75 mol% Bi2O3 to Nb-doped SnO2 ceramic resulted in maximum nonlinear coefficientand breakdown voltage with α = 14 and E 0.5 = 19 525 V/cm. To improve the density as well asthe nonlinearity of this system, different amounts of Co2O3 were added. The optimal conditionsfor the best nonlinearity were 1300 °C with 0.03 mol% Co2O3 addition. Deviation fromthis doping content, toward either higher or lower Co2O3 content, causes the deterioration of I−Vcharacteristics. It can be concluded that the incorporation of cobalt oxides into SnO2-based varistors improves the nonlinearity in the low and intermediate current density regionsbecause of the increased barrier height $(\Phi_{\rm B})$ . The experimental results were explainedwith the defect barrier model for SnO2-based varistors.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 11 , Issue 3 , September 2000 , pp. 155 - 158
Copyright
© EDP Sciences, 2000

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