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Anti-Stokes luminescence in nitrogen doped GaAs1−xPx alloys*

Published online by Cambridge University Press:  15 January 1998

A. Meftah ,
M. Oueslati  and
D. Scalbert
A. Meftah
Affiliation:
Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II,
M. Oueslati
Affiliation:
Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II,
D. Scalbert*
Affiliation:
Campus Universitaire, 1060 le Belvédère, Tunisie and Groupe d'Étude des Semiconducteurs, Université de Montpellier II, CNRS, 34095 Montpellier, Cedex 5, France
*
[email protected]
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Abstract

In indirect band gap ${\rm GaAs}_{1-x}{\rm P}_x$ alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 1 , Issue 1 , January 1998 , pp. 35 - 38
Copyright
© EDP Sciences, 1998

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Footnotes

*

This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux" held at Hammamet the 8, 9 and 10 November 1996.

References

* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux" held at Hammamet the 8, 9 and 10 November 1996.