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Analytical model for charge transport in organic thin-film transistors: application to polythiophene

Published online by Cambridge University Press:  03 September 2012

S. Zorai  and
R. Bourguiga
S. Zorai*
Affiliation:
Laboratoire de physique des matériaux: structure et propriétés, groupe Physique des Composants et Dispositifs Nanométriques, Faculté des sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
R. Bourguiga
Affiliation:
Laboratoire de physique des matériaux: structure et propriétés, groupe Physique des Composants et Dispositifs Nanométriques, Faculté des sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
*
ae-mail: [email protected]
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Abstract

The electronic charge transport in active layer of organic thin-film transistor (OTFT) based on conductor polythiophene (sexithiophene (6T) and octithiophene (8T)) was studied. A mathematical model is presented based on the variable range hopping (VRH) transport theory. Using the VRH model the expression of source-drain current is established for two regimes: linear regime for drain bias VD = −2 V and saturation regime for VD = −30 V at low temperature and at room temperature. All electrical key parameters of OTFTs based on polythiophene have been extracted. A good agreement between theoretical model and experimental measurement of electrical characteristics is obtained for both temperature ranges: low temperature and room temperature.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 59 , Issue 2 , August 2012 , 20201
Copyright
© EDP Sciences, 2012

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