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Symposium A – Amorphous Silicon Technology-1996

M. Hack, A. Matsuda, E.A. Schiff, R. Schropp, S. Wagner

Volume 420 - 1996

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Research Article

Nano-Scale Resolved Detection of Photo-Current in a-Si:H Films
Takashi Koida, Masashi Kawasaki, Ryuichiro Maruyama, Mitsutaka Matsuse, Hideomi Koinuma
Published online by Cambridge University Press:

10 February 2011, 895
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The growth mode of a-Si:H plasma CVD film was observed by AFM to range from homogeneous deposition to heterogeneous island formation depending on the substrate material and deposition temperature. The correlation between the grain-like structure and electric property of the film deposited on transparent conductive SnO2, substrates has been elucidated by using an AFM with a conductive cantilever. The local distribution of photo-current in the a-Si:H films was found to agree well with the topographic image; the photo-current around the grain boundaries was lower than that on the grains. The effect of surface treatment with an aqueous HF solution indicates that the imhomogeneity in the photo-current originates from the preferential oxidation around the grain boundaries rather than intrinsic electric property.

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Symposium A – Amorphous Silicon Technology-1996

Research Article

Nano-Scale Resolved Detection of Photo-Current in a-Si:H Films

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Symposium A – Amorphous Silicon Technology-1996

Research Article

Nano-Scale Resolved Detection of Photo-Current in a-Si:H Films