An electrochemical etching technique has been developed that provides continuous control over the porosity of a porous silicon (PSi) layer as a function of etching depth. Thin films with engineered porosity gradients, and thus a controllable refractive index gradient, have been used to demonstrate broadband antireflection (AR) properties on silicon wafers and solar cell substrates. This low broadband reflectivity is a direct result of the formation of a refractive index gradient at the substrate surface, where the transition between air and silicon occurs continuously throughout the thickness of a PSi film. These graded index films are formed by applying a continuously changing current function to the electrochemical cell during the PSi etch. The application of these films as solar cell AR coatings is of particular interest, where their broadband nature is a critical advantage. For this application, graded index PSi films must not only offer superior AR properties, but must also prove minimally disruptive to the electrical properties of the underlying solar cell. This requirement limits the total thickness of these films to approximately 120 nm, creating several challenges for this process. However, the simplicity and highly reproducible nature of this technique, in combination with its short duration (less than 10 seconds), make it a strong alternative to current vacuum deposited AR coating technology.

Molecular beam epitaxy growth of lattice mismatched In0.53Ga0.47As / GaAs(100) system is studied by in situ scanning tunneling microscope (STM) and reflection high energy electron diffraction. InGaAs layers with a thickness ranging up to 250 nm do not exhibit a smooth surface when grown under In-rich conditions. RHEED and STM confirm the well-ordered (4×2) reconstruction and mono-layer steps associated with this unique planar growth mode. Large STM scans reveal a characteristic morphology of rectangular shaped islands distributed on large flat terraces which are typically more than 300 nm width but only mono-layer steps.

This document presents experimental and theoretical results of an effort to develop semiconductor nanocrystal doped thin films for optical switching applications. Films doped with high quality PbS and PbSe nanocrystals have been fabricated. Measurements of the absorption spectra are compared with theoretical predictions. A general theoretical framework for treating the optical properties of multi-layer dielectric structures containing thin nanocrystal doped layers is used. A simple model (the particle-in-a-sphere) is used as a starting point, however, more sophisticated models (such as those based on k.p theory, or fits to experiment) can easily be incorporated. A prototypical micron-scale Fabry-Perot optical cavity has been constructed and is discussed. Theoretical predictions for the switching behavior of such a structure, upon introduction of the semiconductor nanocrystal material into the optical cavity, are presented. A full-length version of this paper is available at Evident Technologies' web site.

Self-assembly of micron sized and smaller particles has previously been demonstrated using biologically inspired events such as DNA hybridization and interactions of ligands and receptors. In order to implement these techniques to create practical electronic devices, a quantitative measure of the amount of substance attached to the device surface just prior to the final assembly is essential. In the present investigation, this crucial quantity was investigated from the electrophoretic mobility of particles, which was ascertained by examining their motion under applied electric fields ranging from 0 to 1 V/mm. Sequential CCD camera images processed with custom software enabled calculation of particle velocities during their viscous motion in an inexpensive electrophoresis chamber filled with a low-conductivity buffer solution. A linear fit through the velocity vs. electric field data points yielded the electrophoretic mobility, which was utilized in the Stokes equation to calculate the net amount of charge present on each device. For 5.44 micron carboxyl-coated polystyrene beads, this method indicated a charge of 2.69e-15 C per particle. The manufacturer of the beads, Spherotech corporation, quoted 6.37e-11 C as the expected charge. The more than three orders of magnitude discrepancy is at least partially attributable to the electrophoretic retardation and relaxation effects of small electrolyte ions in the buffer solution. The method was also applied to silicon islands in the shape of a cone frustum with similar dimensions to the beads. A mercapto-ethane-sulfonate monolayer, attached via thiol bonds to the gold-coated surface of the islands, provided the charge. The amount of charge on an island was calculated to average 2.48e-15 C, corresponding to a density of 3.82e10 mercapto-ethane-sulfonate groups per square centimeter of Au surface.

We report on the efficient photoluminescence up-conversion in colloidally synthesized CdTe nanocrystals. We demonstrate that the efficiency of photon energy up-conversion and magnitude of spectral shift can be controlled: (i) by the size of the nanocrystals; (ii) by the temperature dependence of the excited state absorption coefficient; (iii) by the dependence on excitation intensity. From the analysis of the experimental data we can suggest that intrinsic gap states are involved as intermediate states in the photoluminescence up-conversion rather than nonlinear two-photon absorption or Auger processes.

We have investigated current-voltage characteristics of individual CdSe colloidal nanodots by conductive-tip atomic force microscopy (AFM). The colloidal nanodots were spun-coat and scattered on a self-assembled monolayer of thiophene molecules formed on Au (111) surfaces for single dot measurements. A thin SiO2 layer was deposited on the sample surface in order to prevent the dots being moved by the tip during measurement. We imaged the topography of isolated single dots by AFM operated in contact mode, and measured current-voltage characteristics with the conductive tip positioned on single dots; large conductivity changes which suggest resonant tunneling through a quantized energy level in the dot was observed even at room temperature.

An understanding of how dots couple in quantum dot molecules and arrays is needed so that the possibilities for tailored nanooptics in these systems can be explored. The properties of tunnel-coupled dots will be determined by how the dots couple through atomic-scale junctions. We present an atomistic empirical tight-binding theory of coupled, CdS nanocrystal artificial-molecules, vertically and laterally coupled InAs/GaAs self-assembled dots, and arrays of InAs/GaAs self-assembled dots. Electron states follow the artificial molecule analogy. The coupling of hole states is much more complex. There are significant departures from the artificial molecule analogy because the interdot hole coupling is determined by the hole envelope functions, as for the electron states, and by the hole atomic state near interdot interfaces.

The possible semiconducting device use of single wall carbon nanotubes (SWNTs) requires a technique for the determination of the exact structure of the nanotubes assembled in the device configuration. Raman spectroscopy has been established as a precise and non-destructive tool for the characterization of graphitic nanostructures. Double resonance theory, which is used to explain the dispersive nature of the Raman bands, has attracted much attention for its potential use for the characterization of the electronic and phonon spectra of these nanostructures. Dispersive features in the Raman spectra of low dimensional graphitic materials, such as carbon nanotubes, can be used to measure directly the anisotropy, or the trigonal warping effect, in the phonon dispersion relations about the hexagonal corner of the Brillouin zone (BZ) of graphite.

The electrical properties of ultrananocrystalline diamond (UNCD) films of approximately 1μm thickness were studied. UNCD films were deposited on p-type Si substrates from CH4/Ar/N2 gas mixtures using microwave plasma CVD techniques. It was found that the UNCD films with higher nitrogen concentration and higher electron conductivity have substantially higher concentration of shallow levels with activation energy of about 0.05 eV. The change of concentration, activation energy and capture cross-section of nitrogen-induced levels for UNCD films synthesized using different nitrogen concentration in the plasma was studied by charge– based deep level transient spectroscopy.

Precious metals are choice materials for a myriad of applications due their high electrical conductivity, resistance to corrosion, and ligand binding specificity. Indispensable in modern electronics fabrication, precious metals also enjoy widespread use as catalysts, support substrates, and sensor elements. Recent progress towards metallization on diminishing size regimes has imposed increasingly stringent demands upon thin film preparation methodologies. Metallization techniques employed in ultra large scale integration (ULSI) device fabrication, nanoelectromechanical systems (NEMS), and arrayed nanosensors will require unparalleled control of surface morphology, deposition rate, and substrate adhesion without sacrificing throughput or cost effectiveness. Furthermore, precious metal films of this type are essential for fundamental investigations aimed at elucidating the intricate nature of interfacial topics ranging from self-assembled monolayers (SAMs) to heterogeneous catalysis. In contrast to complex and expensive vacuum methods of metallization, research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Thin and thick films of gold, platinum, and palladium nanoparticles have been prepared as a result of the immersion of germanium and gallium arsenide substrates into dilute, aqueous solutions of tetrachloraurate (III), tetrachloroplatinate (II), and tetrachloropalladate (II), respectively. This methodology yields nanostructured precious metal films with control over surface morphology and deposition rate. Moreover, metal films prepared in this manner exhibit excellent adhesion to the underlying semiconductor substrate. The resultant films were characterized utilizing scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and scanning probe microscopy (SPM). This method provides for the facile interfacing of metal nanostructures with group (IV) and III-IV compound semiconductor surfaces.

As a starting material to produce BaTiO3 ceramic, BaCO3 fine powders (<1 μm in diameter) are required. In this paper, how to transform 2–3μm length viraulate BaCO3 microlite into 0.2–0.8μm globose particle is discussed. The factors that affect aggregation and dispersion in fine powder are experienced. Special equipment is introduced to this process. The particle diameter is determined by the SEM micrograph. The whole process is a simple method.

The optical absorption for ? electrons as a function of the electron wavevector k is investigated by first order perturbation theory in graphite and single wall carbon nanotubes (SWNTs). The matrix element connecting two states in the valence and conduction bands is found to be significantly anisotropic in k-space and polarization dependent. In the case of graphite, the absorption shows a node around the equi-energy contour, and in the case of SWNTs we obtain selection rules that allow only transitions between certain pairs of subbands. The strength of the optical absorption is not only diameter dependent but also chirality dependent. The implications of the optical absorption matrix element on the resonant conditions are discussed.

Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.

The band structure of self-assembled Si/Ge quantum dot structures deposited by molecular beam epitaxy in the Stranski Krastanov growth mode is characterized by optical and electrical spectroscopy. Interband and intraband absorption, photocurrent, photoluminescence, Raman and admittance spectroscopy of structures with quantum dots of about 20 nm lateral size offer insight into the discrete level scheme within the valence band, the optical transitions and the lifetime of localized hole states. The results are discussed with respect to their possible applications in infrared light detection, storage and quantum-logic devices.

A hybrid quantum-mechanical/molecular-dynamics simulation is performed for a cracked-Si model under tension with multiple H2O molecules around the crack-front, to investigate possible effects of the environmental molecules on fracture initiation in Si. Electronic structures near the crack-front are calculated quantum-mechanically on the basis of the density-functional theory. The quantum-mechanical atoms are embedded in a system of classical atoms. The hybrid simulation results show significant effects of stress intensity factor on the reaction processed of the H2O molecules at the crack front.

This paper describes the synthesis, characterization and optical properties of binary and ternary mercury chalcogenide quantum dots and clusters. Such materials were made by applying a synthetic strategy involving the simultaneous use of strong Hg(II) coordinating ligands and the explicit phase separation of both metal and chalcogen precursors. High quality QDs and clusters are obtained in this manner with sharply structured absorption and band edge emission covering the visible to near infrared.

Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1–2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

The semiconductor industry association roadmap has identified interconnects as a major barrier to progress starting in 2010. Optical interconnects (OI) offer an attractive solution for chip-to-chip communications, however there is no general agreement on how to design them. Eventually, OI may also perform a large amount of intra-chip clocking and signaling, which implies that any chip-to-chip OI system must be designed to be compatible with intra-chip OI, from the points of view of manufacturability, architecture, and device design. We are exploring the use of nanoscale silicon for OI. This paper reports progress toward the demonstration of two basic building blocks of an OI system, namely a Si laser and a Si-based modulator.

The highly sensitive surface of porous silicon (PSi) and the possibility to measure changes in its electrical properties can be used for electrical biosensor applications. The sensing scenario can be extended from the well-characterized organic solvents and pH sensors to detection of biological processes involving the presence of charged molecules. We have investigated the change in electrical properties (capacitance and conductance) of macroporous silicon layers upon exposure to organic solvents and water. Evaluation of our sensor to detect a biological event was done by addressing DNA hybridization. As opposed to the previous work published in this field, in our devices the electrical contact is made on the crystalline silicon (c-Si) substrate. This allows a complete exposure of the surface to the sensing species and reduces the generation of ionic currents through the porous silicon matrix. We will report results of a complete characterization of our device including response speed, selectivity and sensitivity.

We have studied the alignment of self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy using misfit dislocations generated due to the strained InxGa1-xAs/GaAs superlattice system. Structural characteristics of aligned SAQDs have been investigated by using atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements. AFM and TEM images showed that vertical stacked InAs QD arrays were aligned along <110> direction on the controlled strained layer. The anisotropic alignments along the [110] and [110] directions are closely related with the anisotropy of strain-relief for both directions, which affect the anisotropic diffusivity of indium adatoms on the strained superlattice layer. The strong alignment appears on the highly strained layer. These results indicate that aligned InAs quantum dots formed by changing the periods of strained superlattice hold promise for potential applications in nanoelectronic devices, such as single electron tunneling devices.