Thermoelectric CuIn1-xAlxTe2 compounds (x=0, 0.05, 0.1, 0.15, 0.50) have been synthesized by solid state reaction followed by spark plasma sintering. The influence of Al substitution on electrical and thermal transport properties has been investigated in the CuInTe2 compounds. It was found that the Seebeck coefficient and electrical conductivity is reduced by isovalent replacement of In with Al. Our first principle calculation indicates Al substitution leads to the widen band gap, the reduction in the number of degeneracy of valence band and the effective mass. Furthermore, a large reduction in thermal conductivity is achieved through the enhanced phonon scattering via point defect as well as the nano-sized particles observed between grain boundaries and on the grain surface. In spite of the reduced charge transport properties, an improved figure-of- merit ZT is achieved, reaching 0.8 at 800 K, 33% higher in comparison to the pure CuInTe2 compound.

Thermal rectification in nanostructured materials is an active topic of research and development. Here it is suggested that porous semiconductor materials can offer an unmatched tailoring of its structural properties, resulting in both the ability to study the effects of nanoscale morphology on thermal rectification phenomenon, and the perspective to achieve large thermal rectification over a wide temperature range in combination with other beneficial properties, such as a wide tunability of thermal conductivity, or optical transparency of the thermally rectifying structure. In this contribution we are presenting the first to our knowledge experimental demonstration of thermal rectification in mesoporous silicon. The influence of pore morphology controlled via Si substrate crystallographic orientation and etching conditions on thermal rectification are studied. The effect of oxidation of the porous material is presented as well. Experimental results are further compared with several recently published theoretical predictions of thermal rectification in similar structures.

Nano-phase separation is of great relevance for functional materials like thermoelectrics. Indeed, nano-domains in CoSb-based half-Heusler thermoelectrics have been found to reduce the lattice heat conductivity, which increases the figure of merit. Within this context, we studied the configurational energy in the alloy CoTi0.5Sc0.5Sb by means of first-principle calculations. We consider structures formed by Ti (Sc) nano-domains. In recent publications we have showed that these domains are the most stable atomic configurations. In this work we found that for a given concentration the electronic density of states is considerably modified as the volume of the domains are increased.

Depending on their application temperature thermoelectric (TE) materials are classified in three main categories; as low (up to 250°C), intermediate (up to 550°C) and high (above 600°C) temperature. Currently, Skutterudites (CoSb3) based materials have shown promising results in the intermediate temperature range (300-500°C). This family of material is highly suitable for automotive, marine transportation and industrial power generation applications to recover the waste heat from the exhaust and generate electricity. Conventional TE modules need p- and n-type semiconductor materials and for the skutterudite family, iron (Fe) has proven to be among the best candidates for the substitution of cobalt sites. Additionally, rare earths are introduced as rattlers in the crystal cages of the skutterudite to decrease the thermal conductivity, thus improving the figure of merit ZT of the TE material. For practical application for device fabrication, stability of these materials is of great importance. Compositional stability is being addressed as the material decomposes above certain temperature. Temperature dependent x-ray diffraction study was performed on Fe substituted, Yb-filled skutterudites, using Beam Line I711 at MAX LAB, to observe the crystal structure as a function of temperature. Diffraction patterns were collected from room temperature up to 500°C by utilizing Huber furnace. The results show success in filling process showing almost 80% reduction of the thermal conductivity from bulk. Additionally the thermal expansion coefficient value was within the average value for skutterudites which proves practical application of this powder for industrial applications.