Carbon fine particles including single-walled carbon nanotubes (SWNTs) were synthesized by hot-filament and plasma assisted chemical vapor deposition. Specific surface area was evaluated for carbon fine particles synthesized under optimized conditions along with purified SWNTs and multi-walled carbon nanotubes (MWNTs) for comparison. The value of specific surface area for the synthesized carbon fine particles was smaller than the SWNTs, but larger than the MWNTs. Pore size distribution was analyzed with desorption isotherms by the DH method. Although smaller pores are included in the purified SWNTs than the synthesized carbon fine particles, pores of size larger than several nm were included more in the synthesized carbon fine particles.

The tube-length distribution in the semiconducting single-wall carbon nanotube (s-SWCNT) ink extracted by the electric-field-induced layer formation (ELF) method was characterized by atomic force microscopy, which revealed that the nonionic surfactant Brij 700 adopted in ELF causes the significant and homogeneous shortening of SWCNTs compared with sodium cholate that is frequently used for the dispersion of SWCNTs as an ionic surfactant. It was found that the shortened s-SWCNTs in the semiconducting ink positively effect on the uniformity of performance among the s-SWCNT thin-film transistors.

AFM induced local anodic oxidation of HOPG was carried out in various conditions such as humidity, applied voltage and scan speed. A clear evidence of different oxidation features between HOPG and graphene has been confirmed and discussed.

These results should contribute to the progress of the micro/nano fabrication of graphene by the local anodic oxidation.

We confirmed a specific detection of immunoglobulin E(IgE) by using an aptamer immobilized reduced graphene oxide(rGo) field effect transistor(FET). A detection limit and dynamic range were estimated 8.1 ng/ml and 10000 respectively. These characteristics are comparable with current fluorescent markers. Although a mobility of rGo FET was around 5 cm2/V.sec, and this is two to three orders lower than mechanically exfoliated pristine graphene FET, a sensitivity of it was only one order lower than using pristine graphene.