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High performances and low variability of semiconducting-SWCNT thin-film-transistors achieved by shortening tube lengths

Published online by Cambridge University Press:  13 March 2014

Takeshi Saito ,
Shigekazu Ohmori ,
Kazuki Ihara ,
Yuki Kuwahara  and
Fumiyuki Nihey
Takeshi Saito
Affiliation:
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8565, Japan Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan
Shigekazu Ohmori
Affiliation:
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8565, Japan Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan
Kazuki Ihara
Affiliation:
Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan NEC Smart Energy Research Laboratories, Tsukuba, Ibaraki, 305-8501, Japan
Yuki Kuwahara
Affiliation:
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8565, Japan Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan
Fumiyuki Nihey
Affiliation:
Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan NEC Smart Energy Research Laboratories, Tsukuba, Ibaraki, 305-8501, Japan
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Abstract

The tube-length distribution in the semiconducting single-wall carbon nanotube (s-SWCNT) ink extracted by the electric-field-induced layer formation (ELF) method was characterized by atomic force microscopy, which revealed that the nonionic surfactant Brij 700 adopted in ELF causes the significant and homogeneous shortening of SWCNTs compared with sodium cholate that is frequently used for the dispersion of SWCNTs as an ionic surfactant. It was found that the shortened s-SWCNTs in the semiconducting ink positively effect on the uniformity of performance among the s-SWCNT thin-film transistors.

Keywords

Cnanostructuresemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1586: Symposium C – Advanced Nano Carbon Devices and Materials , 2014 , jsapmrs13-1586-6852
Copyright
Copyright © Materials Research Society 2014 

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