The effects of thermoelastic residual stresses on multilevelstructures was determined by finite element calculation. A design of experiment approach was used, with five geometrical parameters. The results are presented in the form of stress contours, shown as functions of pairs of parameters, with the other parameters held constant. This analysis shows the relative sensitivities to the different parameters with respect to potential damage and failure. Comparison of the results with previous observations of microstructures seems to validate this experimental design approach.

The origin and the effects of asymmetrical electrical behavior in sputtered PZT (Zr/Ti=65/35) thin film capacitors with Pt electrodes have been studied. The asymmetry and constriction in the P-E hysteresis loops are understood to result from differences in mechanical stress at the top and bottom PZT/Pt interfaces because they experience different thermal cycles during fabrication. A method for correctly positioning asymmetric loops on the polarization axis is suggested. Both d.c. and a.c. electrical stressing (of either polarity) lead to hysteresis relaxation and symmetrization. A post-processing anneal leads to electrically symmetrical devices.

We rerxprt on plasma enhanced, liquid source, chemical vapor deposition (LS-CVD) of tantalunm penta oxide (Ta2 O5) material using a penta ethoxy tantalum [Ta(OC2H5)5] liquid source. We have investigated several basic plasma deposition conditions such as - dependence of deposition rate and refractive index on the source tank temperature, carrier gas N2 flow rate, reactive gas O2 flow rate anid substrate temperature. Structural properties investigated by θ-2θ x-ray measurements showed amorphous nature of the films and Auger electron spectrosopy indicated carbon-contamination free growth of Ta2O5 films having proper stoichiometry (Ta/O = 0.4). In addition to this we have also performed electrical measurements on Au/Ta2O5 /Si MOS structure which exhibit very well defined C-V characteristics with flat band voltage as tow as +0.3V, low leakage current and high breakdown voltages. As a hitherto unreported step in Ta2O5 processing we also performed rapid thermal. Annealing at 700°C and 900°C for 5 minutes which showed much improved electrical properties. All results suggest growth of high quality Ta2O5 films from a carbon-basud Ta liquid source, due to an effect of plasma enhanced deposition process.