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Wafer Bonding of Silicon Carbide and Gallium Nitride

Published online by Cambridge University Press:  21 March 2011

Jaeseob Lee ,
T. E. Cook ,
E. N. Bryan ,
J. D. Hartman ,
R. F. Davis  and
R. J. Nemanich
Jaeseob Lee
Affiliation:
Department of Material ScienceNorth Carolina State University, Raleigh, NC 27695
T. E. Cook
Affiliation:
Department of Material ScienceNorth Carolina State University, Raleigh, NC 27695
E. N. Bryan
Affiliation:
Engineering and Department of PhysicsNorth Carolina State University, Raleigh, NC 27695
J. D. Hartman
Affiliation:
Department of Material ScienceNorth Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Material ScienceNorth Carolina State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Engineering and Department of PhysicsNorth Carolina State University, Raleigh, NC 27695 Department of Material ScienceNorth Carolina State University, Raleigh, NC 27695, E-mail address: [email protected]
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Abstract

Wafer bonding of SiC and GaN may prove important in the formation of high power heterojunction devices. Results of bonding SiC (C or Si surface) onto GaN (Ga surface) are presented. The samples were n-type 6H SiC and epitaxial n-type 2H(wurzite) GaN grown on SiC. The results demonstrate bonding for both possibilities, but the bonding of the C surface SiC to Ga surface GaN is more readily accomplished. A lower resistance was found for the C-face SiC/Ga-face GaN. The results indicate that the polarity of the interface is important for bonding of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I2.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Pankove, J., Chang, S.S., Lee, H.C., Molnar, R.J., Moustakas, T.D., and Zeghbroeck, B. van, Int. Electron. Dev. Meet. Tech. Dig., pp. 389–392 (1994).Google Scholar
2. Chang, S.S., Pankove, J., Leksono, M., and Zeghboeck, V. van, Dev. Res. Conf. Dig. pp. 106–107 (1995).Google Scholar
3. Yang, B., Trampert, A., Jenichen, B., Brandt, O., and Poog, K.H., Appl. Phys. Lett., 73(26), 3869, 28 Dec. (1998).Google Scholar
4. Jin-Phillipp, N.Y., Sigle, W., Black, A., Babic, D., Bowers, J.E., Hu, E.L., and Ruhle, M., J. Appl. Phys., 89(2), 1017, 15 Jan. (2001).Google Scholar
5. Capaz, R.B., Lim, H., and Joannopoulos, J.D., Phys. Rev. B., 51(24), 17755, 15 Jun. (1995).Google Scholar
6. Pauling, L., The Nature of the Chemical Bond, 3rd ed., Cornell university Press, Ithaca, NY, p.93 (1960).Google Scholar