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VPD/SIMS Measurement of Surface Al on Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

V.K.F. Chia ,
R.W. Odom ,
R.J. Bleiler ,
D.B. Sams  and
R.S. Hockett
V.K.F. Chia
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.W. Odom
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.J. Bleiler
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
D.B. Sams
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.S. Hockett
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

An experimental protocol using secondary ion mass spectrometry to measure Al in vapor phase decomposition (VPD) solutions has been developed to achieve a detection limit of 108 atoms/cm2. The analytical technique is called VPD/SIMS. The procedure utilizes sample preparation techniques developed for microvolume SIMS. Preliminary SIMS analysis of simulated VPD solutions consisting of dilute HF indicate that a theoretical detection limit of 5.7×105 Al atoms/cm2 is possible from a 6″ wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 167
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Shimazaki, A. and Mashimo, N., SEMI/Japan Technology Symposium, November 14, 1989, pp. 285.Google Scholar
2. Hues, S.M. and Williams, P. in Secondary Ion Mass Spectrometry SIMS V, edited by Benninghoven, A., Colten, R.J., Simons, D.S. and Werner, H.W. (Proc. of Fifth Intl. Conf., Washington, DC 1986) pp. 303–305.Google Scholar
3. Hockett, R.S. in Semiconductor Cleaning Technology/1989, edited by Ruzyllo, J. and Novak, R.E., (Electrochemical Society, 90(9), (1990) pp. 227.Google Scholar
4. Shimazaki, A., Defects in Silicon II, edited by Bullis, W.M., Gosele, U. and Shimara, F., (Electrochemical Society, 91(9), (1991) pp. 47.Google Scholar
5. Neumannand, C. and Eichinger, P., Spectrochimica Acta, 46B, 1391 (1991).Google Scholar
6. Chia, V.K.F., Bleiler, R.J., Sams, D.B., Craig, A.Y. and Odom, R.W., Appl. Phys. Lett. 59(20), 2567 (1991).Google Scholar
7. Rosenblatt, D.H. and Chia, V.K.F., Microcontamination, Vol. 2, 31 (1992).Google Scholar
8. Storm, H.A., Brown, K.F. and Stein, J.D., Anal. Chem. 49(13), 2023 (1977).Google Scholar