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VPD/SIMS Measurement of Surface Al on Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

V.K.F. Chia ,
R.W. Odom ,
R.J. Bleiler ,
D.B. Sams  and
R.S. Hockett
V.K.F. Chia
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.W. Odom
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.J. Bleiler
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
D.B. Sams
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
R.S. Hockett
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

An experimental protocol using secondary ion mass spectrometry to measure Al in vapor phase decomposition (VPD) solutions has been developed to achieve a detection limit of 108 atoms/cm2. The analytical technique is called VPD/SIMS. The procedure utilizes sample preparation techniques developed for microvolume SIMS. Preliminary SIMS analysis of simulated VPD solutions consisting of dilute HF indicate that a theoretical detection limit of 5.7×105 Al atoms/cm2 is possible from a 6″ wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 167
Copyright
Copyright © Materials Research Society 1992

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References

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