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Vertical, Dual Gate CMOS Structure in Two Laser-Recrystallized Silicon Layers over Oxidized Silicon Substrate
Published online by Cambridge University Press: 21 February 2011
Abstract
A seven mask CMOS process that provides vertically integrated structures with joint gates is described. The structures have been characterized as individual NMOS and PMOS transistors. An implant technique will be described which may permit the fabrication of fully self-aligned CMOS structures.
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- Copyright © Materials Research Society 1984
References
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