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The Use of Secondary Ion Mass Spectrometry to Investigate Wire Bonding Yield Problems on Gold Contacts

Published online by Cambridge University Press:  21 February 2011

G. R. Mount ,
T. L. Walzak ,
Y. C. Koo  and
D. McClure
G. R. Mount
Affiliation:
Philips Semiconductors, Sunnyvale, California, U.S.A. (current address: Charles Evens Associate, San Jose, California, U.S.A.)
T. L. Walzak
Affiliation:
Research Office, University of Western Ontario, London, Ontario, Canada.
Y. C. Koo
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada.
D. McClure
Affiliation:
McClure Consulting, Georgetown, Texas, U.S.A. (for Celestica Inc. Canada)
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Abstract

With ongoing demand for high density wiring and high I/O on VLSI chips, the requirement of high wire bond yield is a challenge to achieve low cost, high performance and reliable products. Secondary Ion Mass Spectrometry (SIMS) was used to investigate the metallurgical contaminants on the gold wire bond pads and their impact on wire bond yields. SIMS depth profile studies showed that copper and nickel in concentrations greater than 1 wt% caused poor wire bondability, while copper concentration at less than 0.1 wt% resulted in good bondability of Al ultrasonic wire bonded to the gold pads.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 245
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Harmon, G.G., Wire Bonding - “Towards 6-Sigma Yield and Fine Pitch”, IEEE Trans.Comp., Hybrids, Manuf. Technol., 15, No.6, pp. 1005–1012 (1992).Google Scholar
2. Walzak, T.L., Mount, G.R., Koo, Y.C. and McClure, D., “The Use of Surface Analytical Techniques to Investigate Wire Bonding Problems on Gold Contacts”, Surface Science Western Report (Unpublished), (1993).Google Scholar
3. Klein, H.P., Durmutz, U., Pauthner, H. and Rohrich, H., “Aluminum Bond Pad Requirements for Reliable Wirebonds”, Proc. IEEE Int. Symp. On Physics and Failure Analysis of IC's, pp. 44–49 Google Scholar
4. Ramamurthy, S., Walzak, T.L., Lu, S.F., Lipson, T.C. and McIntyre, N.S., “Study of Tinplate Structure Using Imaging Secondary Ion Mass Spectrometry”, Surf and Interface Anal., 17, pp. 834–841, (1991)Google Scholar
5. Wilson, R.G., Stevie, F.A. and Magee, C.W., Secondary Ion Mass Spectrometry; A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, Wiley Press, NY, (1989)Google Scholar
6. Benninghoven, A., Rudenauer, F.G. and Werner, H.W., Secondary Ion Mass Spectrometry; Basic Concepts, Instrumental Aspects, Application and Trends, Wiley Press, NY, (1987)Google Scholar
7. McGuire, G.E., Jones, J.V. and Dowell, H.J., “The Auger Analysis of Contaminants that Influence the Thermocompression Bonding of Gold”, Thin Solid Films, 45, pp. 59–68 (1977)Google Scholar