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Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface

Published online by Cambridge University Press:  10 February 2011

V. Gopal ,
E.-H. Chen ,
E. P. Kvam  and
J. M. Woodall
V. Gopal
Affiliation:
School of Materials Engineering, Purdue University, W.Lafayette, IN 47907.
E.-H. Chen
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W.Lafayette,IN 47907.
E. P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, W.Lafayette, IN 47907.
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W.Lafayette,IN 47907.
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Abstract

We have investigated the direct growth of narrow-gap InAs on wide-gap GaP by Molecular Beam Epitaxy. InAs and GaP have the largest mismatch among all the III-arsenides and the III-phosphides – 11%. A perfect epitaxial relationship is maintained between the InAs and the GaP despite the large lattice mismatch. Moreover, a reproducible defect structure with unique electronic properties is developed at the heterointerface. A point defect associated with the intersection of 90° misfit dislocations may act as an ordered, structural dopant. This dopant is fully ionized with a constant, high sheet carrier density of 1013 cm−2, independent of InAs layer thickness, and exhibits no freeze out even at 5 K. Device applications for such a system include temperature insensitive Hall sensors. We have also demonstrated high electron mobilities (over 10000 cm2/V-sec) in nominally undoped thick InAs layers grown on GaP. The explanation of this effect is presented to emphasize the exciting possibilities of band gap engineering in this system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 65
Copyright
Copyright © Materials Research Society 1999

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