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Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices

Published online by Cambridge University Press:  29 June 2011

Branden Long ,
Yibo Li  and
Rashmi Jha
Branden Long
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, Ohio 43606, U.S.A.
Yibo Li
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, Ohio 43606, U.S.A.
Rashmi Jha
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, Ohio 43606, U.S.A.
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Abstract

In this report, we studied the role of the oxygen concentration in TiOx layer of Ni/TiOx/TiO2/Ni stack based 2-terminal resistive random access memory (RRAM) devices. The sample with oxygen deficient TiOx layer showed Schottky diode type J-V characteristics in the as-fabricated state while the sample with higher oxygen content in TiOx demonstrated MIM or back-to-back connected diode behavior. The Capacitance-Voltage (C-V) profiling was performed and doping density vs. depletion width characteristic was obtained. The conductance technique was implemented to study the interface state density. The RRAM type switching behavior of these samples was studied. The sample with high oxygen in TiOx showed filament based switching after electroforming while the sample with low oxygen in TiOx showed switching governed by the charge trapping.

Keywords

memoryoxidedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q08-02
Copyright
Copyright © Materials Research Society 2011

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References

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