Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:35:15.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Understanding the Fundamentals for Package Induced Failure in BEOL Interconnect at 20nm Node

Published online by Cambridge University Press:  29 May 2013

Vivian Ryan ,
Shan Gao ,
Chirag Shah ,
Holm Geisler ,
Dirk Breuer ,
Frank Kuechenmeister ,
Jens Paul ,
Zafer Kutlu ,
Kashi Vishwanath Machani  and
Matthias U. Lehr
Vivian Ryan
Affiliation:
GLOBALFOUNDRIES Inc., 257 Fuller Road, Albany, NY 12203, USA
Shan Gao
Affiliation:
GLOBALFOUNDRIES Inc., 400 Stone Break Rd Ext, Malta, NY 12020, USA
Chirag Shah
Affiliation:
GLOBALFOUNDRIES Inc., 1050 E Arques Ave, Sunnyvale, CA 94085, USA
Jens Paul
Affiliation:
GLOBALFOUNDRIES Inc., Wilschdorfer Landstrasse 101, 01109 Dresden, Germany
Zafer Kutlu
Affiliation:
GLOBALFOUNDRIES Inc., 1050 E Arques Ave, Sunnyvale, CA 94085, USA
Matthias U. Lehr
Affiliation:
GLOBALFOUNDRIES Inc., Wilschdorfer Landstrasse 101, 01109 Dresden, Germany
Get access

Abstract

Package-induced failures for BEOL interconnects in sub-45nm technology nodes have drawn attention to the great silicon and packaging integration challenges introduced by the weak mechanical properties of ULK-containing metallization elements. Empirical data and modeling studies for a range of silicon and packaging factors at 20nm node reveal fundamental insights into susceptibility to damage and approaches for recovery. Analysis of increase in degradation as BEOL layouts evolve to finer dimensions points to understanding of changes that will enable continued device scaling.

Keywords

microelectronicsdielectric propertiesthermal stresses
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa08-01
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Fu, L., Su, M., Kuechenmeister, F., and Huang, W., IEEE Proceedings of 16th IPFA, 2009.Google Scholar
Wang, G.T., Ho, P.S., and Groothuis, S., Microelectronics Reliability, vol. 45(7–8), p 1079, 2005.CrossRefGoogle Scholar
Kioussis, D., Ryan, E.T., Gates, S., Madan, A., Klymko, N., Parks, C., Molis, S., Augur, R., Masuda, H., Restaino, D., Sun, Z., Hosadurga, S., Cohen, S., Virwani, K., and Grill, A., AVS, 2011.Google Scholar
Auersperg, J., Vogel, D., Lehr, M.U., Grillberger, M., and Michael, B. 11th Int. Conf. EuroSimE, 2010.Google Scholar
Kuechenmeister, F., Breuer, D., Geisler, H., Paul, J., Shah, C., Machani, K., Kosgalwies, S., Agarwal, R., and Gao, S., 2012 IEEE 14th Electronics Packaging Technology Conference.Google Scholar
Ryan, E.T., Gates, S., Madan, A., Kioussis, D., Liniger, E., Bonilla, G., Zin, E., Kim, C., Mayer, U., Peeva, A., and Grill, A., Advanced Metallization Conference, October 2011, San Diego.Google Scholar
Ryan, E., Gates, S., Grill, A., Molid, S., Flaitz, P, Arnold, J., Sankarapandian, M., Cohen, S., Ostrovski, Y., and Cimitrakopoulos, C., J. Applied Physics, 104, 094109 (2008).CrossRefGoogle Scholar
Geisler, H., Schuchardt, E., Brueckner, M., Hofmann, P., Machani, K., Kuechenmeister, F., Breuer, D., Engelmann, H., to be presented in IRPS 2013.Google Scholar
Ryan, V., Breuer, D., Geisler, H., Kioussis, D., Lehr, M., Paul, J., Machani, K., Shah, C., Kosgalwies, S., Lehmann, L., Lee, J., Kuechenmeister, F., Ryan, E., Karimanal, K., IRPS 2012.Google Scholar
Wylde, JW, Spelt, JK, Int J Adhesion Adhes 1998; 18:237–46.CrossRefGoogle Scholar
Zin, E., Bang, W. H., Ryan, E. T., King, S., and Kim, C. -U., to be published in Appl. Phys. Lett..Google Scholar
Hsing, A., Cheng, M., Dauskardt, R., Geisler, H., Ryan, V., Machani, K., Breuer, D., Lehr, M., Paul, J., and Iacopi, F., IITC, June 6, 2012.Google Scholar