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Un-cooled Micro-bolometer with Sandwiched Thermo-sensing Layer Based on Ge Films Deposited by Plasma

Published online by Cambridge University Press:  01 February 2011

Andrey Kosarev ,
Mario Moreno ,
Alfonso Torres  and
Roberto Ambrosio
Andrey Kosarev
Affiliation:
[email protected], INAOE, Electronics, Luis Enrique Erro No.1, Sta. Maria tonanzintla, Puebla, 72000, Mexico, 52 222 2663 100 Ext. 1409
Mario Moreno
Affiliation:
[email protected], Institute National for Astrophysics, optics and Electronics, Electronics, L.E.Erro No.1, Tonantzintla,, Puebla, Puebla, 72840, Mexico
Alfonso Torres
Affiliation:
[email protected], Institute National for Astrophysics, optics and Electronics, Electronics, L.E.Erro No.1, Tonantzintla,, Puebla, Puebla, 72840, Mexico
Roberto Ambrosio
Affiliation:
[email protected], Institute National for Astrophysics, optics and Electronics, Electronics, L.E.Erro No.1, Tonantzintla,, Puebla, Puebla, 72840, Mexico
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Abstract

We have fabricated and studied an un-cooled micro-bolometer with thermo-sensing layer sandwiched between two electrodes. The micro-bolometer has “bridge” configuration to provide sufficient thermo isolation of the thermo-sensing layer and is made on the surface of silicon wafer by means of surface micro-machining technique. The support layer of SiN and thermo-sensing layer of a-Ge:H,F have been deposited by low frequency PE CVD. The active area of the thermo-sensing layer is Ab=70x66 μm2. Temperature dependence of conductivity σ(T), current-voltage characteristics I(U), spectral noise density and thermal response time have been measured to characterize operation and to determine main performance characteristics. Activation energy of the thermo-sensing layer was Ea=0.34 eV providing thermal coefficient of resistance α=0.043 K-1. Pixel resistance was in the range Rb=(1÷30)x105 Ohm. Current and voltage responsivities were in the range RI=0.3÷14 AW-1 and RU=(1÷2)x105 VW-1, respectively. The value of detectivity was in the range of D*=(1÷40)x108 cmHz1/2W-1 and response time was τ=100 μs. The characteristics obtained in this micro-bolometer with sandwiched thermo-sensing layer make it promising for further development.

Keywords

microelectronicsGeplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A17-05
Copyright
Copyright © Materials Research Society 2006

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References

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