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Tungsten Silicide Zinc as a High Temperature Zinc Diffusion Source

Published online by Cambridge University Press:  28 February 2011

D.L. Plumton
D.L. Plumton*
Affiliation:
Texas Instruments Incorporated Central Research Laboratories, Dallas, TX 75265
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Abstract

A process for Zn diffusion into GaAs during rapid thermal processing has been developed using Zn doped tungsten silicide as the diffusion source. The WSi:Zn is a sputter deposited, solid source layer that undergoes capless annealing in a quartz-halogen lamp system. For a given time and temperature the diffusion of Zn into GaAs is controlled by both the Zn concentration and the W/Si ratio in the film. Tungsten-rich films are Zn concentration “independent” while Si-rich films are Zn concentration “dependent.” Changing the film composition allows shallow Zn diffusions at either a low or a high temperature. Deep Zn diffusions are possible through higher temperatures or longer anneal times for any given WSi:Zn composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 469
Copyright
Copyright © Materials Research Society 1987

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References

1. Shih, K., J. Electochem. Soc. 123, 1737, (1976).Google Scholar
2. Blum, S.E., Small, M.B., and Gupta, D., Appl. Phys. Lett., 42, 108, (1983)Google Scholar
3. Field, R.J. and Ghandi, S.K., J. Electrochem. Soc., 129, 1567, (1982).Google Scholar
4. Roedel, R.J., Edwards, J.L, Righter, A., Holm, P., and Erkaya, H., J. Electrochem. Soc. 131, 1726, (1984).Google Scholar
5. Holonyak, N. Jr., Laidig, W.D., Camras, M.D., Coleman, J.J., andDapkus, P.D., Appl. Phys. Lett., 39, 102, (1981).Google Scholar
6. Tiwari, S., Tech. Dig. IEDM, p.262, (1986).Google Scholar
7. Tiku, S.K., Delaney, J.B., Gabriel, N.S., and Yuan, H.T., MRS Symp. Proc., 35, 483, (1984).Google Scholar
8. Kim, B., Tserng, H.Q., Tiku, S.K., Shih, H.D., Electron. Lett., 21, 259, (1985).Google Scholar
9. Oberster, J.D. and Streetman, B.G., Thin Solid Films, 103, 17, (1983).Google Scholar
10. Barett, N.J., Bartle, D.C., Todd, A.G., and Grange, J.D., MRS Symp. Proc., 35, 451, (1985).Google Scholar
11. Ghandi, S.K., VLSI Fabrication Principles, (John Wiley and sons, New York, 1983), p. 151.Google Scholar