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Titanium Disilicide Formation on Cmos Structures with Phosphorous Doped Gates

Published online by Cambridge University Press:  21 February 2011

S. Chtttipeddi ,
A. K. Nanda ,
V. C. Kannan  and
W. T. Cochran
S. Chtttipeddi
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
A. K. Nanda
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
V. C. Kannan
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
W. T. Cochran
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
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Abstract

Self aligned refractory metal silicides such as titanium disilicide have been used extensively in VLSI and ULSI structures. Unlike earlier work which has relied on undoped substrates and a single implant species, in the present study TiSi2 formation on phosphorous doped poly-Si in the presence of multiple dopants has been investigated. TEM micrographs are discussed which show the difference in silicide formation for the case of the BF2 and arsenic implanted samples. We have found that the presence of fluorine in the BF2 implant retards the silicide formation for phosphorous doped poly-Si substrates. Additionally, the effect of substrate grain size on TiSi2 formation has been investigated using undoped α-Si and poly-Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 75
Copyright
Copyright © Materials Research Society 1993

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