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TiO2:Ce/CeO2 High Performance Insulators For Thin Film Electroluminescent Devices

Published online by Cambridge University Press:  10 February 2011

A. R. Bally ,
K. Prasad ,
R. Sanjinés ,
P. E. Schmid ,
F. Lévy ,
J. Benoit ,
C. Barthou  and
P. Benalloul
A. R. Bally
Affiliation:
Institute of Applied Physics, EPFL, Lausanne, Switzerland, [email protected]
K. Prasad
Affiliation:
Institute of Applied Physics, EPFL, Lausanne, Switzerland, [email protected]
R. Sanjinés
Affiliation:
Institute of Applied Physics, EPFL, Lausanne, Switzerland, [email protected]
P. E. Schmid
Affiliation:
Institute of Applied Physics, EPFL, Lausanne, Switzerland, [email protected]
F. Lévy
Affiliation:
Institute of Applied Physics, EPFL, Lausanne, Switzerland, [email protected]
J. Benoit
Affiliation:
Laboratoire d'Acoustique et Optique de la Matière Condensée, Université P. et M. Curie, Paris, France, [email protected]
C. Barthou
Affiliation:
Laboratoire d'Acoustique et Optique de la Matière Condensée, Université P. et M. Curie, Paris, France, [email protected]
P. Benalloul
Affiliation:
Laboratoire d'Acoustique et Optique de la Matière Condensée, Université P. et M. Curie, Paris, France, [email protected]
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Abstract

The electrical properties of titanium dioxide thin films have been stabilised by cerium doping. These films have a high permittivity between 35 to 45 and withstand 650°C. Multilayer TiO2:Ce/CeO2 insulators have been fabricated. The breakdown voltage is increased by a factor 10 with a modest decrease in the permittivity (30 – 35 instead of 35 – 45).

Electroluminescent devices (ELDs) with a classical ZnS:Mn phosphor have been prepared using TiO2:Ce as the first insulator and a TiO2:Ce/CeO2 multilayer as the second insulator. Compared with a standard ELD based on Y2O3 insulators, devices with the new insulators show a significant decrease of the threshold voltage along with a notable increase of the brightness. An important increase is also achieved in the total device efficiency which is maintained over a large range of brightness and transferred charge. Consequences of rapid thermal annealing and conventional thermal treatments on device performance have also been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 471
Copyright
Copyright © Materials Research Society 1997

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