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Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

Published online by Cambridge University Press:  01 February 2011

Koichi Awazu*
Affiliation:
CAN-FOR, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4 305–8562, Japan
Makoto Fujimaki
Affiliation:
Department of Electrical Engineering and Bioscience, Waseda University, 3–4–1 Ohkubo, Shinjuku-ku, Tokyo 169–8555, Japan
Yoshimichi Ohki
Affiliation:
Department of Electrical Engineering and Bioscience, Waseda University, 3–4–1 Ohkubo, Shinjuku-ku, Tokyo 169–8555, Japan
Tetsuro Komatsubara
Affiliation:
UTTAC, Tsukuba University, Tennodai, Tsukuba 305–8577, Japan
*
*[email protected], voice +81–29–861–5650, fax +81–29–861–2919
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Abstract

We have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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