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Three-Dimensional Asymmetrical Modeling of Rapid Thermal Annealing of Silicon Wafers

Published online by Cambridge University Press:  22 February 2011

V. Nagabushnam  and
R.K. Singh
V. Nagabushnam
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL-32611
R.K. Singh
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL-32611
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Abstract

We have developed an analytical tool to predict temperature variations occuring both across the wafer and down the thermal cycles, based on very simple 3-dimensional physical models depicting the heat transfer processes taking place during a typical rapid thermal processing (RTP) step. This model takes into account the convective and the radiative heat losses along with the thermal conduction within the wafer. An hybrid control volume formulation has been used to solve the heat conduction equation to yield numerical solutions of temperature variation, both on and within the wafer. The effect of ambient gas flow direction and the related asymmetric convective heat loss on the temperature non-uniformity across the wafer at different stages of the thermal cycle is well analyzed. Finally, the temperature non-uniformity across a wafer patterned with oxide is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 383
Copyright
Copyright © Materials Research Society 1994

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References

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