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Thin Gate Oxide using a New RTO/-N Clusterable Reactor

Published online by Cambridge University Press:  22 February 2011

H. Walk ,
L. Deutschmann ,
F. Martin ,
C. Masurel  and
A. Bauer
H. Walk
Affiliation:
AST Elektronik GmbH, Ulm, Germany
L. Deutschmann
Affiliation:
AST Elektronik GmbH, Ulm, Germany
F. Martin
Affiliation:
GRESSI-GIE CNET CEA-LETI Grenoble, France
C. Masurel
Affiliation:
GRESSI-GIE CNET CEA-LETI Grenoble, France
A. Bauer
Affiliation:
Fraunhofer-Institut fdr Integrierte Schaltungen, Erlangen, Germany
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Abstract

We present recent results obtained in thin gate oxides. These oxides are grown in a new clusterable RTP-system for 200mm diameter wafers. The main innovations of the reactor are dealing with the chamber geometry, gas distribution, double pyrometry and dedicated circular lamp array in order to insure an optimized light flow onto the wafer. Analytical and electrical data are given according to several oxidant and nitridant ratios (O2, N2O), The influence of different process parameters such as temperature, reaction time, N-content are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 175
Copyright
Copyright © Materials Research Society 1994

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References

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