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Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

Published online by Cambridge University Press:  22 June 2011

K. Aryal ,
I. W. Feng ,
B. N. Pantha ,
J. Li ,
J. Y. Lin  and
H. X. Jiang
K. Aryal
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409
I. W. Feng
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409
B. N. Pantha
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409
J. Y. Lin
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409
H. X. Jiang
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409
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Abstract

Thermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Keywords

epitaxyErthermoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1325: Symposium E – Energy Harvesting—Recent Advances in Materials, Devices and Applications , 2011 , mrss11-1325-e07-08
Copyright
Copyright © Materials Research Society 2011

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