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Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane

Published online by Cambridge University Press:  01 February 2011

M. S. Carroll  and
J. C. Sturm
M. S. Carroll
Affiliation:
Present address: Agere Systems, Murray Hill NJ
J. C. Sturm
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton NJ; E. Napolitani, D. De Salvador, and M. Berti INFM and Dept. of Physics, University of Padova, Padova, Italy
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Abstract

Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850°C in nitrogen is examined using x-ray diffraction as a measure of the average substitutional carbon concentration in the layers after annealing. A characteristic time constant to describe the reduction of average substitutional carbon concentration in the layer is extracted from the XRD measurements. The characteristic time constants are found to agree within a factor of 3 with that observed in previous reports. However, the time constants are found to depend more strongly on the as-grown substitutional carbon concentration than what is predicted by simple precipitation kinetics, assuming carbon diffusion to a constant number of nucleation centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C4.3
Copyright
Copyright © Materials Research Society 2002

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