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Thermal Reliability of Pt/Ti/Pt/Au Schottky Contact on InP with a GalnP Schottky Barrier Enhancement Layer

Published online by Cambridge University Press:  10 February 2011

H. C. Kuo ,
C. H. Lin ,
B. G. Moser ,
H. Hsia ,
Z. Tang ,
H. Chen ,
M. Feng  and
G. E. Stillman
H. C. Kuo
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
C. H. Lin
Affiliation:
Department of Material Science and Engineering, Material Research Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
B. G. Moser
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
H. Hsia
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
Z. Tang
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
H. Chen
Affiliation:
Department of Material Science and Engineering, Material Research Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
M. Feng
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
G. E. Stillman
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801.
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Abstract

We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with anfi of 117 GHz and an fmax of 168 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 231
Copyright
Copyright © Materials Research Society 1999

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