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Thermal Metalorganic Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications

Published online by Cambridge University Press:  15 February 2011

J. S. Custer ,
Paul Martin Smith ,
Ronald V. Jones ,
A. W. Maverick ,
D. A. Roberts ,
J. A. T. Norman  and
A. K. Hochberg
J. S. Custer
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Paul Martin Smith
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Ronald V. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A. W. Maverick
Affiliation:
Louisiana State University, Baton Rouge, LA 70803
D. A. Roberts
Affiliation:
Schumacher, Incorporated, Carlsbad, CA 92009
J. A. T. Norman
Affiliation:
Schumacher, Incorporated, Carlsbad, CA 92009
A. K. Hochberg
Affiliation:
Schumacher, Incorporated, Carlsbad, CA 92009
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Abstract

Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here we present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450°C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0-20 at.%. Typical impurity contents are 5-10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1000 μΩ-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 343
Copyright
Copyright © Materials Research Society 1996

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References

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