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Theory and Simulation of Dopant Diffusion in SiGe

Published online by Cambridge University Press:  01 February 2011

Chun-Li Liu ,
Marius Orlowski ,
Aaron Thean ,
Alex Barr ,
Ted White ,
Bich-Yen Nguyen ,
Hernan Rueda  and
Xiang-Yang Liu
Chun-Li Liu
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Marius Orlowski
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Aaron Thean
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Alex Barr
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Ted White
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Bich-Yen Nguyen
Affiliation:
Advanced Process Research and Development Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Hernan Rueda
Affiliation:
RF/IF Technology Laboratory, Digital DNA Laboratories, Motorola, inc., Tempe, AZ 85284, USA
Xiang-Yang Liu
Affiliation:
Computational Nanoscience Group, Physical Sciences Research Laboratories, Motorola, inc., Los Alamos, NM 87544, USA
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Abstract

Strained Si-based technology has imposed a new challenge for understanding dopant implantation and diffusion in SiGe that is often used as the buffer layer for a strained Si cap layer. In this work, we describe our latest modeling effort investigating the difference in dopant implantation and diffusion between Si and SiGe. A lattice expansion theory was developed to account for the volume change due to Ge in Si and its effect on defect formation enthalpy. The theory predicts that As diffusion in SiGe is enhanced by a factor of ∼10, P diffusion by a factor of ∼2, and B diffusion is retarded by a factor of ∼6, when compared to bulk Si. These predictions are consistent with experiment. Dopant profiles for As, P, and B were simulated using process simulators FLOOPS and DIOS. The simulated profiles are in good agreement with experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D5.9
Copyright
Copyright © Materials Research Society 2003

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