Hostname: page-component-7479d7b7d-68ccn Total loading time: 0 Render date: 2024-07-15T17:05:55.108Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

Published online by Cambridge University Press:  22 February 2011

C.W. Cullen  and
J.C. Sturm
C.W. Cullen
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
Get access

Abstract

The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 23
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sturm, J. C., Schwartz, P. V., and Garone, P. M., Appl. Phys. Lett. 56, 961 (1990).CrossRefGoogle Scholar
[2] Sturm, J. C., Garone, P. M., and Schwartz, P. V., J. Appl. Phys., 69, 542 (1991).CrossRefGoogle Scholar
[3] Sturm, J. C. and Reaves, C. M., IEEE Trans. Electron Devices, 39, 81 (1992).CrossRefGoogle Scholar