Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:45:20.556Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Resistivity for Tin And Ti-Si-N Films

Published online by Cambridge University Press:  15 February 2011

U. Gottlieb ,
X. Sun ,
E. Kolawa  and
M. -A. Nicolet
U. Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique, France
X. Sun
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
M. -A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
Get access

Abstract

We have measured by the four-point probe or Van der Pauw technique the resistivity in vacuum from 77 K to 873 K or 1073 K of Ti34Si23N43 and Ti53N47. These films were reactively sputter-deposited on oxidized silicon wafers, with thickness ranging from 200 nm to 500 nm. The resistivity of the Ti34 Si23N43 films decreases with temperature from 680. μΩcm at 80 K to about 570 μΩcm at 873 K. In contrast, resistivity of our Ti53N47 films rises with temperature, reaching a stable value of 62 μΩcm at above 673 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Reid, J.S., Sun, X., Kolawa, E., and Nicolet, M.-A., IEEE Eletron. Devices Lett. 15, 298 (1994).Google Scholar
2. Sun, X., Reid, J.S., Kolawa, E., Nicolet, M.-A., in Adavanced Matallization and Interconnect Systems for ULSI Applications in 1995, edited by Ellwanger, R. and Wang, S.-Q. (Mater, Res. Soc. Proc., Portland, OR. 1995).Google Scholar
3. van der Pauw, L. J., Phillips. Res. Rep. 13, 1 (1958).Google Scholar
4. Posadowski, W., Thin Solid Films, 162, 111 (1988).Google Scholar
5. Abeles, B., Sheng, Ping, Coutts, M. D., and Arie, Y., Adv. Phys. 24,407 (1975).Google Scholar