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Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Published online by Cambridge University Press:  01 February 2011

Zhixun Ma ,
Todd Holden ,
Zhiming Wang ,
Samuel S. Mao  and
Gregory J. Salomo
Zhixun Ma
Affiliation:
[email protected], Lawrence Berkeley National Lab, EETD, 1 Cyclotron Rd, Berkeley, CA, 94720, United States
Todd Holden
Affiliation:
[email protected], Queensborough Community College of CUNY, Physics Department, Bayside, NY, 11364, United States
Zhiming Wang
Affiliation:
[email protected], University of Arkansas, Department of Physics, Fayetteville, AR, 72701, United States
Samuel S. Mao
Affiliation:
[email protected], Lawrence Berkeley National Lab, Berkeley, CA, 94720, United States
Gregory J. Salomo
Affiliation:
[email protected], University of Arkansas, Department of Physics, Fayetteville, AR, 72701, United States
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Abstract

We have studied the temperature dependence of CER spectra of layered InGaAs QWRs and QDCs and found strain-induced splitting of lh and hh states occur in both InGsAs and GaAs layers. By fitting experimental data using Varshni law and Bose-Einstein type relation, various parameters are obtained, which are similar to those of bulk GaAs. We pointed out that a caution must be excised when extracting the electron-phonon interaction parameters by subtracting the thermal dilation part from the experimental data of the embedded semiconductor microstructures because in these structures the temperature-induced lattice-dilation may produce additional strain besides the lattice mismatch.

Keywords

III-Voptical propertiesself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M19-03
Copyright
Copyright © Materials Research Society 2007

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References

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