Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-20T13:19:38.886Z Has data issue: false hasContentIssue false

Synthetic Control and Properties of Processible Poly(Methylsilsesquioxane)S

Published online by Cambridge University Press:  17 March 2011

Jin-Kyu Lee
Affiliation:
School of Chemistry and Molecular Engineering and School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Kookheon Char
Affiliation:
School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Hie-Joon Kim
Affiliation:
School of Chemistry and Molecular Engineering and School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Hee-Woo Rhee
Affiliation:
Department of Chemical Engineering, Sogang University, Seoul 121-742, Korea
Hyun-Wook Ro
Affiliation:
School of Chemistry and Molecular Engineering and School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Dae Young Yoo
Affiliation:
School of Chemistry and Molecular Engineering and School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Do Y. Yoon
Affiliation:
School of Chemistry and Molecular Engineering and School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Get access

Abstract

Processible poly(methylsilsesquioxane)s (PMSSQs) were prepared in THF solution under nitrogen atmosphere in the presence of HCl catalyst. It was found that various reaction parameters such as concentration, temperature, reaction time, the amount of water, and the amount of acid catalyst could affect the molecular weight and the amount of functional end groups of PMSSQ samples. Thin films prepared from our PMSSQ samples by spin-coating followed by curing to 420°C exhibited a much better crack resistance than those presented in the literature, while the dielectric constant remained practically the same, i.e., ca. 2.7.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baney, R. H.; Itoh, M.; Sakakibara, A.; Suzuki, T. Chem. Rev. 1995, 95, 1409.10.1021/cr00037a012Google Scholar
2. Adachi, H.; Adachi, E.; Hayashi, O.; Okahashi, K. Japanese Patent Kokai-H-1-26639, 1989; Chem. Abstr. 1989, 111, 58566.Google Scholar
3. Adachi, H.; Adachi, E.; Hayashi, O.; Okahashi, K. Japanese Patent Kokai-H-1-92224, 1989; U.S. Patent 5,081,202, 1989; Chem. Abstr. 1989, 111, 154663.Google Scholar
4. Yamazaki, N.; Nakahama, S.; Goto, J.; Nagawa, T.; Hirao, A. Contemp. Top. Polym. Sci. 1984, 4, 105.Google Scholar
5. Peters, L. Semicond. Int. 1998, Sept, 64.Google Scholar
6. Lee, W. W.; Ho, P., Eds. Low-Dielectric Constant Materials. MRS Bull. 1997, 22(10).Google Scholar
7. International Technology Roadmap for Semiconductors; Semiconductor Industry Association; 1999.Google Scholar
8. (a) Tanev, P. T.; Pinnavaia, T. J. Science 1995, 267, 865. (b) Kresge C. T.; Leonowics M. E.; Roth W. L.; Vartuli J. C.; Beck J. B. Nature 1992, 359, 710. (c) Huo, Q.; Margolese D. I.; Ciesla, V.; Feng, P.; Gier T. E.; Sieger, P.; Leon, R.; Petroff P. M.; Schuth, F.; Stucky G. D. Nature 1994, 368, 317. (d) Tamaki, R.; Chujo Y. J. Mater. Chem. 1998, 8, 1113. (e) Yang, H.; Coombs, N.; Ozin G. A. J. Mater. Chem. 1998, 8, 1205.10.1126/science.267.5199.865Google Scholar
9. (a) Hedrick, J. L.; Miller, R. D.; Hawker, C. J.; Carter, K. R.; Volksen, W.; Yoon, D. Y.; Trollsas, M. Adv. Mater. 1998, 10, 1049. (b) Mikoshiba, S.; Hayase S. J. Mater. Chem. 1999, 9, 591. (c) Nguyen C. V.; Carter K. R.; Hawker, C. J.; Hedrick, J. L.; Jaffe, R. L.; Miller, R. D.; Remenar, J. F.; Rhee, H. -W.; Rice, P. M.; Toney, M. F.; Trollsas, M.; Yoon, D. Y. Chem. Mat. 1999, 11, 3080.10.1002/(SICI)1521-4095(199809)10:13<1049::AID-ADMA1049>3.0.CO;2-F3.0.CO;2-F>Google Scholar
10. Loy, D. A.; Shea, K. J. Chem. Rev. 1995, 95, 1431.10.1021/cr00037a013Google Scholar
11. Suminoe, T.; Matsumura, Y.; Tomomitsu, O. Japanese Patent Kokai-S-53-88099, 1978; Chem. Abstr. 1978, 89, 180824.Google Scholar
12. Abe, Y.; Hatano, H.; Gunji, T. J. Polym. Sci. Part A: Polym. Chem. 1995, 33, 751.10.1002/pola.1995.080330416Google Scholar
13. Takamura, N.; Gunji, T.; Hatano, H.; Abe, Y. J. Polym. Sci. Part A: Polym. Chem. 1999, 37, 1017.10.1002/(SICI)1099-0518(19990401)37:7<1017::AID-POLA16>3.0.CO;2-F3.0.CO;2-F>Google Scholar
14. Kudo, T.; Gordon, M. S. J. Am. Chem. Soc. 1998, 120, 11432.10.1021/ja980943kGoogle Scholar
15. Cook, R. F.; Liniger, E. J. Electrochem. Soc. 1999, 146, 4439.10.1149/1.1392656Google Scholar