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Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

Published online by Cambridge University Press:  01 February 2011

Ch. Sargentis ,
K. Giannakopoulos ,
A. Travlos  and
D. Tsamakis
Ch. Sargentis
Affiliation:
Department of Electrical and Computer Engineering, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 157 73 Athens, Greece
K. Giannakopoulos
Affiliation:
Institute of Materials Science, National Centre for Scientific Research ‘Demokritos’, 153 10 Ag. Paraskevi Attikis, Athens, Greece
A. Travlos
Affiliation:
Institute of Materials Science, National Centre for Scientific Research ‘Demokritos’, 153 10 Ag. Paraskevi Attikis, Athens, Greece
D. Tsamakis
Affiliation:
Department of Electrical and Computer Engineering, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 157 73 Athens, Greece
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Abstract

MOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.

We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.4
Copyright
Copyright © Materials Research Society 2005

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References

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