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Surface Segregation of Boron During Si-MBE Growth

Published online by Cambridge University Press:  22 February 2011

M. R. Sardela Jr ,
W. -X. Ni ,
J. O. Ekberg ,
J. -E. Sundgren  and
G. V. Hansson
M. R. Sardela Jr
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
W. -X. Ni
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
J. O. Ekberg
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
J. -E. Sundgren
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
G. V. Hansson
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
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Abstract

Boron doping, using an elemental boron source during molecular beam epitaxial growth of silicon, has been studied. The boron flux was provided by a high temperature source heated by radiation and electron bombardment. The maximum boron deposition rate used was 1×1012 cm−2 s−1 at an estimated B temperature of 1950 °C. For growth at a substrate temperature of 650 °C, there is very little surface segregation when the doping level is in the range 1×1016-1×1019 cm−3. For very high boron to silicon flux ratio (>7×10−3) there is a strong surface segregation that results in surface accumulation of boron. This initially leads to a 2×2 reconstruction of the Si (100) surface, and further surface segregation during growth results in roughening of the surface due to the creation of (311)-facets. In a separate set of experiments, the surface segregation was studied using in situ Auger electron spectroscopy of predeposited layers of boron that were gradually covered by Si capping layers. Strong and surface coverage dependent surface segregation was observed both in the case of Si (100) and (111) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 109
Copyright
Copyright © Materials Research Society 1991

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References

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