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Surface Processes during Growth of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 March 2011

Eray S. Aydil ,
Sumit Agarwal ,
Mayur Valipa ,
Saravanapriyan Sriraman  and
Dimitrios Maroudas
Eray S. Aydil
Affiliation:
Chemical Engineering Department, University of California Santa Barbara, Santa Barbara, CA 93106-5080, U. S. A.
Sumit Agarwal
Affiliation:
Chemical Engineering Department, University of California Santa Barbara, Santa Barbara, CA 93106-5080, U. S. A.
Mayur Valipa
Affiliation:
Chemical Engineering Department, University of California Santa Barbara, Santa Barbara, CA 93106-5080, U. S. A. Department of Chemical Engineering, University of Massachusetts, Amherst, MA 01003-3110, U. S. A.
Saravanapriyan Sriraman
Affiliation:
Chemical Engineering Department, University of California Santa Barbara, Santa Barbara, CA 93106-5080, U. S. A.
Dimitrios Maroudas
Affiliation:
Department of Chemical Engineering, University of Massachusetts, Amherst, MA 01003-3110, U. S. A.
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Abstract

Hydrogenated amorphous silicon films for photovoltaics and thin film transistors are deposited from silane containing discharges. The radicals generated in the plasma such as SiH3 and H impinge on the surface and lead to silicon film growth through a complex network of elementary surface processes that include adsorption, abstraction, insertion and diffusion of various radicals. Mechanism and kinetics of these reactions determine the film composition and quality. Developing deposition strategies for improving the film quality requires a fundamental understanding of the radical-surface interaction mechanisms. We have been using in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry in conjunction with atomistic simulations to determine the elementary surface reaction and diffusion mechanisms. Synergistic use of experiments and atomistic simulations elucidate elementary processes occurring on the surface. Herein, we review our current understanding of the reaction mechanisms that lead to a-Si:H film growth with special emphasis on the reactions of the SiH3 radical.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A5.5
Copyright
Copyright © Materials Research Society 2004

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References

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