Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-07T02:15:16.418Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Oxide Evolution on Al-Si Bond Wires

Published online by Cambridge University Press:  01 February 2011

Wentao Qin ,
Ray Doyle ,
Tom Scharr ,
Mahesh Shah ,
Mike Kottke ,
Dennis Werho  and
N. David Theodore
Wentao Qin
Affiliation:
DigitalDNA™ Labs, Motorola Inc., Tempe, AZ 85284, USA.
Ray Doyle
Affiliation:
DigitalDNA™ Labs, Motorola Inc., Tempe, AZ 85284, USA.
Tom Scharr
Affiliation:
Radio Frequency & Digital Signal Processing, Motorola Inc., Tempe, AZ 85284, USA. Contact Author: [email protected]
Mahesh Shah
Affiliation:
Radio Frequency & Digital Signal Processing, Motorola Inc., Tempe, AZ 85284, USA. Contact Author: [email protected]
Mike Kottke
Affiliation:
DigitalDNA™ Labs, Motorola Inc., Tempe, AZ 85284, USA.
Dennis Werho
Affiliation:
DigitalDNA™ Labs, Motorola Inc., Tempe, AZ 85284, USA.
N. David Theodore
Affiliation:
DigitalDNA™ Labs, Motorola Inc., Tempe, AZ 85284, USA.
Get access

Abstract

Al-Si wires are often used to make contact to bond-pads of semiconductor chips and devices. During operation in certain types of devices the wires typically reach relatively high temperatures. Under such circumstances, the oxidation could lead to a decrease of wire conductivity. It is of interest therefore to understand the oxidation behavior of the bond wires, particularly at elevated temperatures. In the current study, Al-Si wires were characterized as received from the supplier, and after thermal annealing at 240°C and 300°C. The surface oxides were found to evolve from a single-layer oxide to a double-layer oxide with varying chemistry. Oxide thicknesses were substantially lower than the wire diameter, even after 3000 hours of annealing. Therefore oxidation of the Al-Si wires has an insignificant impact on their electrical conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B7.11
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hass, G., “The Growth and Structure of Thin Oxide Films”, Optik, 1, 134 (1946).Google Scholar
2. Cabrera, N. and Hamon, J., “On the Oxidation of Aluminum in A Humid Atmosphere”, Comptes Rendus, 225, 59 (1947).Google Scholar
3. Keller, F. and Geisler, A. H., “Application of Electron Microscope to Study of Aluminum Alloys”, Transactions of the American Institute of Mining and Metallurgical Engineers, Institute of Metal Division, 156, 82 (1944).Google Scholar
4. Beck, A. F., Heine, M. A., Caule, E. J. and Pryor, M. J., “The Kinetics of the Oxidation of Al in Oxygen at High Temperature”, Corrosion Science, 7, 1 (1967).Google Scholar
5. Cabrera, N. and Mott, N. F., Rep. Prog. Phys. 12, 163 (1948–1949).Google Scholar
6. Hunter, M. S. and Fowle, P., “Naturally and thermally formed oxide films on Aluminum”, Journal of Electrochemical Society, 103 (9), 482 (1956).Google Scholar
7. Keller, F. and Edwards, J. D., “Formation of the Natural Oxide Film on Aluminum”, Metal Progress, 54, 35 (1948).Google Scholar
8. Keller, F. and Edwards, J. D., “Composition and Properties of the Natural Oxide Film on Aluminum”, Metal Progress, 54, 195 (1948).Google Scholar
9. Hill, G. J. et al., “Safe Operating Limits for Back driving in ATE” IEEE International Test Conference, 1987, p 798.Google Scholar
10. King, R., Schaick, C. V. and Luck, J., “Electrical Overstress of Nonencapsulated Aluminum Bond Wires”, Proceedings of 27th International Reliability Physics Symposium, 1989, p 141.Google Scholar
11. Tse, P. K. and Lach, T. M., “Aluminum Electromigration of 1-mil Bond Wires in Octal Inverter Integrated Circuits” Proceedings of 45th Electronic Components and Technology Conference, 1995, p. 900 Google Scholar
12. Harwood, V. R., “Safeguarding Devices Against Stress Caused by In-Circuit Testing”, Hewlett-Packard Journal, Oct 1984.Google Scholar
13. Coxon, M., Kershner, C., and McEligot, D., “Transient Current Capacities of Bond Wires in Hybrid Microcircuits”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 9 (3), 279 (1986).Google Scholar
14. Fredriksson, G., “How Pulsed Operation Affects Aluminium Bond Wires”, Quality and Reliability Engineering International, 1, 257 (1985).Google Scholar
15. Keller, F. and Edwards, J. D., “Composition and Properties of the Natural Oxide Film on Aluminum”, Metal Progress, 54, 195 (1948).Google Scholar