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Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films

Published online by Cambridge University Press:  25 February 2011

J.M. Steigerwald ,
S.P. Murarka ,
D.J. Duquette  and
R.J. Gutmann
J.M. Steigerwald
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
S.P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
D.J. Duquette
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
R.J. Gutmann
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
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Abstract

Three chemical processes that occur during the chemical mechanical polishing (CMP) of copper are described in terms of their effect on surface planarity, polish rate, and corrosion resistance of the polished copper. These processes are surface layer formation, dissolution of mechanically abraded copper, and chemical acceleration of the polish rate. The role of these processes is demonstrated with two slurry formulations used in the CMP of copper at Rensselaer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 133
Copyright
Copyright © Materials Research Society 1994

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References

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