Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T15:20:36.283Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Cleaning and Passivation for the Growth of Si/Oxide/Si Structures

Published online by Cambridge University Press:  25 February 2011

Kun—Chih Wang ,
Huey—Liang Hwang ,
Chung—Yuan Kung  and
Tri—Rung Yew
Kun—Chih Wang
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Huey—Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Chung—Yuan Kung
Affiliation:
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Tri—Rung Yew
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Get access

Abstract

This paper presents the results of surface cleaning and passivation of Si and oxide surfaces for the growth of Si/oxide/Si structures. Silicon surfaces are cleaned by the spin—etch process prior to the growth of silicon oxide. A silicon layer is then deposited after subsequent surface cleaning and chemical treatment on the surface of oxide/Si. Both the oxide and the silicon layers are grown in a plasma enhanced chemical vapor deposition system. The interface structure between layers of deposited Si/oxide/Si are observed by cross—section transmission electron microscopy (XTEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 137
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iverson, R.B. and Reif, R., J. Appl. Phys., 62, 1675 (1987).CrossRefGoogle Scholar
2. Kato, T., IEEE. Trans. Electron. Devices, 35, 923 (1988).Google Scholar
3. Nakazawa, K., Tanaka, K., and Yamauchi, N., Jpn. J. Appl. Phys., 28, 569 (1989).Google Scholar
4. Sameshima, T., Hara, M., and Usui, S., Jpn. J. Appl. Phys., 28, 1789 (1989)Google Scholar
5. Serikawa, T., Shirai, S., and Okamoto, A., Jpn. J. Appl. Phys., 28, L1871 (1989)Google Scholar
6. Mohri, M., Kakinuma, H., Sakamoto, M., and Sawai, H., Jpn. J. Appl. Phys. 30, L799 (1991)Google Scholar
7. Iyer, R., Chang, R.R., Dubey, A., and Lile, D.L., J. Vac. Sci. Technol. B6, 1174 (1988)Google Scholar