Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-16T15:24:01.498Z Has data issue: false hasContentIssue false

Surface Chemical Characteristics of CMP Polyurethane Pads

Published online by Cambridge University Press:  01 February 2011

Hongqi Xiang
Affiliation:
[email protected], Cabot Microelectronics Corporation, R & D Enabling, 870 N. Commons Drive, Aurora, IL, 60504, United States, (630) 375-5487, (630) 375-2082
Abaneshwar Prasad
Affiliation:
[email protected], Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, IL, 60504, United States
Edward E. Remsen
Affiliation:
[email protected], Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, IL, 60504, United States
Get access

Abstract

Attenuated total reflection FT-IR spectroscopy coupled with a hydrogen-deuterium exchange technique is employed to investigate the surface chemistry of two polishing pads, a thermoplastic polyurethane (TPU) pad and a commercial cast urethane (PU) pad. A time/temperature-dependent reduction of nitrogen-hydrogen stretching modes (νN-H) was observed when the pads were immersed in deuterium oxide (D2O). Compared to TPU pads, the PU pads showed an ambiguous correlation between dependence of the band intensity changes and D2O-immersion time/temperature. For both types of pads, a sharp decrease in νN-H band intensity and an unexpected rebound in νN-H band intensity were observed within 24 hrs after immersing the pads in D2O. However, a comparable rebound in νN-H band intensity was not observed for conditioned TPU pad samples. This phenomenon is proposed to be due to a rearrangement of polar groups at the pad surface when the pad is immersed in water, which may influence pad performance on the asperity level.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, Wiley-Interscience, New York (1997).Google Scholar
2 Zantye, P. B., A, A. Kumar and Sikder, A. K., Mater. Sci. & Eng. R, 45, 89 (2004).Google Scholar
3 Luo, J. and Dornfield, D. A., J. Electochem. Soc., 150, G807 (2003).Google Scholar
4 Seok, J., et. al., Wear, 254, 307 (2003).Google Scholar
5 , D. Castillo-Mejia, Gold, S., Burrous, V. and Beaudoin, S. J., J. Electrochem. Soc. 150, G76(2003).Google Scholar
6 Lu, H., Obeng, Y. and Richardson, K. A., Mater. Charact. 49,177 (2002).Google Scholar
7 Fujita, T., Ishikura, M., Kawai, N., Kinoshita, O. and Morioka, Y., Proceedings of the 22ndInt.VMIC Conf., p. 1 (2005).Google Scholar
8 Takahara, A., Takahashi, K. and Kajiyama, T., J. Biomater. Sci., Polym. Edn., 5, 183 (1993).Google Scholar
9 Prasad, A., Xiang, H. and Remsen, E., Proceedings of the 11th Int. Chemical Mechanical Planarization for ULSI Multilevel Interconnection Conf., p. 554 (2006).Google Scholar
10 Theato, P., Brehmer, M., Conrad, L., Frank, C.W., Funk, L., Yoon, D. Y., J. Lunging,Macromolecues, 39, 2592 (2006).Google Scholar
11Epic® is a registered trademark of Cabot Microelectronics Corporation.Google Scholar