Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:17:00.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Summary of Panel Discussion “Substrate Issues for Wide Bandgap Semiconductors”

Published online by Cambridge University Press:  21 February 2011

Max N. Yoder  and
Peter K. Bachmann
Max N. Yoder
Affiliation:
Office of Naval Research, Arlington, VA 22217–5660
Peter K. Bachmann
Affiliation:
Philips GmbH Forschungslaboratorien, Aachen, Germany Hiroyuki Matsunami, Kyoto University, Kyoto, Japan Hadis Morkoc, University of Illinois, Urbana, IL
Get access

Extract

The state-of-the-art in each of the major materials (Diamond, SiC and III-nitrides) was discussed with the advantages, disadvantages, and requirements of each enumerated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 3
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)