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Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions

Published online by Cambridge University Press:  22 February 2011

R. W. Fathauer ,
T. George  and
W. T. Pike
R. W. Fathauer
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena. California 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena. California 91109
W. T. Pike
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena. California 91109
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Abstract

At a growth temperature of 800°C, Co deposited on Si (111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less tfian a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 507
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Lin, T. L., Fathauer, R. W., Grunthaner, P. J., and d'Anterroches, C., Appl. Phys. Lett. 52, 804 (1988).Google Scholar
2. Tung, R. T. and Batstone, J. L., Appl. Phys. Lett. 52, 648 (1988).CrossRefGoogle Scholar
3. Tung, R. T. and Batstone, J. L., Appl. Phys. Lett. 52, 1611 (1988).Google Scholar
4. White, Alice E., Short, K. T., Dynes, R. C., Gamo, J. P., and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987).CrossRefGoogle Scholar
5. Weber, E. R., in Properties of Silicon (INSPEC, London, 1988), Chap. 14.Google Scholar
6. Grunthaner, P. J., Grunthaner, F. J., Fathauer, R. W., Lin, T. L., Hecht, M. H., Bell, L. D., Kaiser, W. J., Schowengerdt, F. D., and Mazur, J. H., Thin Solid Films 181, 197 (1989).Google Scholar
7. Fathauer, R. W., Nieh, C. W., Xiao, Q. F., and Hashimoto, Shin, Appl. Phys. Lett. 55, 247 (1989).Google Scholar
8. Colclaser, R. A., Microelectronics Processing and Device Design (Wiley, New York, 1980), Chap. 5.Google Scholar
9. George, T. and Fathauer, R. W., 1991 Spring Meeting of the Materials Research Society, Symposium C.Google Scholar