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Sub-Micron Contact Filling and Electromigration of Selfion-Enhanced Physical Vapor Deposited Aluminum Films

Published online by Cambridge University Press:  15 February 2011

R. E. Hummel  and
D. W. Malone
R. E. Hummel
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611–2066
D. W. Malone
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611–2066
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Abstract

The electromigration resistance, the sub-micron contact area filling capability, the crystal structure, the preferred orientation, and the CMOS device characteristics of self-ion-enhanced physical vapor deposited aluminum metallizations have been studied. It has been found that optimal conditions can be achieved by increasing the deposition rate and by applying some ionization and acceleration of the aluminum particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 67
Copyright
Copyright © Materials Research Society 1991

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References

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