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A Study to Estimate the Number of Active Particles in CMP

Published online by Cambridge University Press:  31 January 2011

Jeremiah Mpagazehe
Affiliation:
[email protected], Carnegie Mellon University, Pittsburgh, Pennsylvania, United States
Geo Thukalil
Affiliation:
[email protected], Carnegie Mellon University, Pittsburgh, Pennsylvania, United States
C. Fred Higgs III
Affiliation:
[email protected], Carnegie Mellon University, Pittsburgh, Pennsylvania, United States
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Abstract

To improve yield rates during integrated circuit fabrication a better understanding of the material removal process during CMP is sought. Many material removal models have been generated to predict the material removal rate (MRR) during CMP. The majority of such models estimate that the MRR is equal to the material removed by a single particle multiplied by the total number of particles contributing to the wear process. Particles contributing to the wear process are known as ‘active particles’. Several authors have proposed analytical models to estimate this quantity. This work introduces a new method for estimating the number of active particles in CMP by deducing it from the polish results of a multi-physics CMP model. By employing the particle-augmented mixed lubrication model (PAML) developed by Terrell and Higgs (2008), it is possible to determine the number of active particles in CMP. The predictions of PAML are compared with two popular analytical approaches which have been commonly used to predict the number of active particles during CMP.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

[1]Ahmadi, Goodarz, Xia, Xun, “A model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process,” Journal of The Electrochemical Society Society, vol. 148, pp. 99109, 2001.Google Scholar
[2] Zhao, Yongwu, Chang, L., “A micro micro-contact and wear model for chemical chemical-mechanical polishing of silicon wafers wafers,” WEAR, vol. 252, 2001.Google Scholar
[3] Castillo-Mejia, D., Beaudoin, S., “A Locally Relevant Wafer Wafer-Scale Model for CMP of Silicon Dioxide Dioxide,” Journal of The Electrochemical Society Society, vol. 150, pp. 581586, 2003.Google Scholar
[4] Terrell, E. J. and Higgs, C. F., “A Particle Particle-Augmented Mixed Lubrication Modeling Approach to Predicting Chemical Mechanical Polishing,” Journal of Tribology-Transactions of the Asme, vol. 131, p. 10, Jan 2009.Google Scholar
[5] Chandrasekar, S., et al., “Mechanics of Polishing Polishing,” Transactions of the ASME, vol. 65, 1998.Google Scholar
[6] Luo, J. F. and Dornfeld, D. A., “Material removal mechanism in chemical mechanical polishing: Theory and modeling,” Ieee Transactions on Semiconductor Manufacturing, vol. 14, pp. 112133, May 2001 Google Scholar
[7] Bastawros, Ashraf, Chandra, Abhijit, Gao, Yongjin, Yan, Bo, “Pad Effects on Material bhijit Material-Removal Rat in Che Chemical mical-Mechanical Planarization”, Journal of Electronic Materials Materials, vol. 31, No. 10, 2002.Google Scholar
[8] Luo, J.F. and Dornfeld, D.A., “Effects of Abrasive Size Distribution in Chemical Mechanical Planarization: Modeling and VerificationIeee Transactions on Semiconductor Manufacturing, vol. 16, pp., 469476, August 2003 Google Scholar
[9] Che, W., et al., “Mechanistic understanding of material detachment during micro-scale polishing,” Journal of Manufacturing Science and Engineering-Transactions of the Asme, vol. 125, pp. 731735, 2003.Google Scholar