Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:49:56.822Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

Published online by Cambridge University Press:  21 March 2011

Hidekazu Sato ,
Takae Sukegawa ,
Toshifumi Mori ,
Kousuke Suzuki  and
Haruhisa Mori
Hidekazu Sato
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN. [email protected]
Takae Sukegawa
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Toshifumi Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Kousuke Suzuki
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Haruhisa Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Get access

Abstract

This paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K5.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hu, G. J. and Bruce, R. H., IEEE Trans Electron Devices, vol. 32, No. 3, pp 584(1985).Google Scholar
2. Hao, M., Nayak, D. and Rakkhit, R., IEEE Electron Device Lett., vol. 18, No. 5, pp 215 (1997).Google Scholar
3. Yu, B., Ju, D. H., Kepler, N., King, T.J. and Hu, C., Symp. on VLSI Tech., pp 105 (1997).Google Scholar
4. Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P.H., Stolk, P. A. and Gravesteijn, D. J., IEDM Tech. Dig., pp 829 (1997).Google Scholar