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A Study on the Effect of Post Metal Etching Polymer Strip Process on Via Resistance

Published online by Cambridge University Press:  10 February 2011

Leong-Tee Koh ,
Simon Y. M. Chooi ,
Kho-Liep Chok ,
He-Ming Li  and
Fang-Hong Gn
Leong-Tee Koh
Affiliation:
Deep Submicron Integrated Circuit Department, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
Simon Y. M. Chooi
Affiliation:
Department of Research and Development, Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
Kho-Liep Chok
Affiliation:
Department of Research and Development, Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
He-Ming Li
Affiliation:
Department of Research and Development, Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
Fang-Hong Gn
Affiliation:
Department of Research and Development, Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
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Abstract

Corrosion of the titanium glue layer in a Ti/TiN/Al(Cu) /TiN ARC metal stack is observed during post metal etching polymer stripping in an alkaline chemical stripper. This novel corrosion only occurs when the underlying tungsten via plug is exposed, and leads to high resistance in vias. Investigation of the mechanism is attempted through variation of the polymer stripping duration, the deposition of the titanium and the polymer stripper, and the nitridization of the titanium layer. The high via resistance effect is solved by using analternate polymer stripper which is considered to be an inactive electrolyte for the galvanic reaction between the titanium glue layer and the exposed tungsten via.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 451
Copyright
Copyright © Materials Research Society 1999

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References

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