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The Study on Charge-trapping Mechanism in Nitride Storage Flash Memory Device

Published online by Cambridge University Press:  01 February 2011

Jia-Lin Wu ,
Hua-Ching Chien ,
Chi-Kuang Chang ,
Chien-Wei Liao ,
Chih-Yuan Lee ,
Je-Chuang Wang ,
Yung-Fang Chen  and
Chin-Hsing Kao
Jia-Lin Wu
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan, +886-3-3900119, +886-3-3900119
Hua-Ching Chien
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
Chi-Kuang Chang
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
Chien-Wei Liao
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
Chih-Yuan Lee
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
Je-Chuang Wang
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
Yung-Fang Chen
Affiliation:
[email protected], National Taiwan University, Department of Physics, No. 1 Sec. 4 Roosevelt Rd., Taipei, 106, Taiwan
Chin-Hsing Kao
Affiliation:
[email protected], Chung-Cheng Institute of Technology, National Defense University, Semiconductor Laboratory, No.190, Sanyuan 1st St., Tahsi,, Taoyuan, 335, Taiwan
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Abstract

In this work, the charge-trapping distributions of polysilicon-oxide-nitride-oxide-silicon (SONOS) structure are studied. The trapping energy level of SiNx films with different composition ratio deposited by low-pressure chemical vapor deposition (LPCVD) were first characterized by photoluminescence (PL) measurement. Moreover, using F-N/CHE program and charge pumping techniques, the vertical location and the lateral distribution of programmed charges are investigated in the nitride films with different composition ratio. The study offers strong evidence that the density of charge-trapping levels in the Si-rich nitride is higher than the standard nitride. A simple qualitative model and calculation explains that the trapping level distributions in the SiNx films are shallower by increasing relative Si-content. Furthermore, we have observed the nitride trap vertical location was changed by adjusted Si/N composition ratio. And the lateral distribution of hot electron programmed charges in the modified nitride is broader than that in the standard nitride because it offered more charge-trapping sites and shallower charge-trapping levels. In summary, the study can help researchers to understand the nitride charge-trapping mechanism and the analysis of optical/electrical characteristics.

Keywords

memorynitridephotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-11
Copyright
Copyright © Materials Research Society 2007

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References

1. Chen, T. S., Wu, K. H, Chung, H. and Kao, C. H., IEEE Electron Device Lett. 25, 205 (2004).Google Scholar
2. Deshpande, S. V., Gulari, E., Brown, S. W. and Rand, S. C., J. Appl. Phys. 77, 6534 (1995).Google Scholar
3. Lue, H. T., Shih, Y. H, Hsieh, K. Y, Liu, R. and Lu, C. Y., IEEE Electron Device Lett. 25, 816 (2004).Google Scholar
4. Gu, S. H., Wang, T., Lu, W. P, Ting, W., Ku, Y. H. and Lu, C. Y., IEEE Trans. Electron Devices 53, 103 (2006).Google Scholar