Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
R�hle, M.
1991.
Atomistic structure of internal interfaces by high resolution electron microscopy.
Fresenius' Journal of Analytical Chemistry,
Vol. 341,
Issue. 5-6,
p.
369.
Esnouf, Claude
and
Treheux, Daniel
1991.
Interfaces in New Materials.
p.
170.
Li, D. X.
Pirouz, P.
Heuer, A. H.
Yadavalli, S.
and
Flynn, C. P.
1991.
Interface Characterization in a Nb/MgO/Nb/Al2O3 Multilayer.
MRS Proceedings,
Vol. 221,
Issue. ,
Li, D. X.
Pirouz, P.
Heuer, A. H.
Yadavalli, S.
and
Flynn, C. P.
1992.
A high-resolution electron microscopy study of mgo/al2o3interfaces and mgal2o4spinel formation.
Philosophical Magazine A,
Vol. 65,
Issue. 2,
p.
403.
Rühle, Manfred
1992.
Equilibrium Structure and Properties of Surfaces and Interfaces.
p.
69.
RÜHLE, MANFRED
1993.
Fundamentals of Metal-Matrix Composites.
p.
81.
Gutkin, M. Yu.
and
Romanov, A. E.
1994.
On the stand-off positions of misfit dislocations.
Physica Status Solidi (a),
Vol. 144,
Issue. 1,
p.
39.
Chen, F.R.
Chiou, S.K.
Chang, L.
and
Hong, C.S.
1994.
High-resolution electron microscopy of Cu/MgO and Pd/MgO interfaces.
Ultramicroscopy,
Vol. 54,
Issue. 2-4,
p.
179.
Yu. Gutkin, M.
Romanov, A. E.
and
Aifantis, E. C.
1995.
Stand-off positions and nonuniform distributions of misfit dislocations in heterophase systems.
Physica Status Solidi (a),
Vol. 151,
Issue. 2,
p.
281.
Li, M.
and
Wang, Y.
1995.
Molecular-dynamics simulation of the Ag/Ni interface.
Applied Physics A Materials Science & Processing,
Vol. 61,
Issue. 4,
p.
431.
Finnis, Michael W.
and
Rühle, Manfred
2006.
Materials Science and Technology.
Scheu, C.
Liu, Y.
Oh, S. H.
Brunner, D.
and
Rühle, M.
2006.
Interface structure and strain development during compression tests of Al2O3/Nb/Al2O3 sandwiches.
Journal of Materials Science,
Vol. 41,
Issue. 23,
p.
7798.
Milosevic, Erik
Kerdsongpanya, Sit
McGahay, Mary E.
Wang, Baiwei
and
Gall, Daniel
2019.
The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers.
IEEE Transactions on Electron Devices,
Vol. 66,
Issue. 8,
p.
3473.