Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T01:54:43.309Z Has data issue: false hasContentIssue false

Structured monocrystalline Si thin-film modules from layer-transfer using the porous Si (PSI) process

Published online by Cambridge University Press:  21 March 2011

Auer Richard
Affiliation:
Bavarian Center for Applied Energy Research (ZAE Bayern) Am Weichselgarten 7, D-91058 Erlangen, Germany
Brendel Rolf
Affiliation:
Bavarian Center for Applied Energy Research (ZAE Bayern) Am Weichselgarten 7, D-91058 Erlangen, Germany
Get access

Abstract

We demonstrate a novel technique for fabricating monolithically series connected solar modules from surface structured thin monocrystalline Si films that we prepare by layer transfer using porous Si (PSI process). The novel series connection technique bases on reactive ion etching of the silicon film in a microwave plasma prior and after layer transfer. The module has an area of 25 cm2 and consists of 5 unit cells that have a film thickness of 16 µm. We measure an open-circuit voltage of 3028 mV and a confirmed efficiency of 9.9%. The Si film has a randomly textured surface for light trapping.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yonehara, T., Sakaguchi, K., and Sato, N., Appl. Phys. Lett. 64, 2108 (1994).Google Scholar
2. Brendel, R., in Proc. 14th European Photovoltaic Solar Energy Conf., ed. by Ossenbrink, H. A., Helm, P., and Ehmann, H. (Stephens, Bedford, 1997), p. 1354.Google Scholar
3. Tayanaka, H., Yamauchi, K., Matssushita, T., in Proc. 2nd World Conf. Photovoltaic Solar Energy Conf., ed. by Schmid, J., Ossenbrink, H. A., Helm, P., Ehmann, H., Dunlop, E. D., (Joint Research Center European Comission, Ispra, 1998), p. 1272.Google Scholar
4. Rinke, T. J., Bergmann, R. B., and Werner, J. H., in Proc. 16th European Photovoltaic Solar Energy Conf., ed. by Scheer, H., McNelis, B., Palz, W., Ossenbrink, H. A., and Helm, P. (James & James, London, 2000), p. 1128.Google Scholar
5. Brendel, R., Auer, R., and Artmann, H., Progress in Photovoltaics (2001), in press.Google Scholar
6. Keller, S., Scheibenstock, S., Fath, P., Willeke, G., and Bucher, E., J. Appl. Phys. 87, 1556 (2000).Google Scholar
7. Takato, H., Sekigawa, T., Shimokawa, R., in Proc. 2nd World Conf. on Photovoltaic Solar Energy Conversion, edited by Schmid, J., Ossenbrink, H.A., Helm, P., Ehmann, H., Dunlop, E. D., (European Commission, Ispra, 1998), p. 1810.Google Scholar
8. Kerst, U., Müller, B., Nell, M.E., and Wagemann, H.G., in Technical Digest of the 11th Int. Photovoltaic Science and Engineering Conf., (Tanaka Printing, Kyoto, 1999), p. 747.Google Scholar
9. Matushita, T., Mizuno, S., Tayanaka, H., and Yamauchi, K., in Proc. 16th European Photovoltaic Solar Energy Conf., ed. by. Scheer, H., McNellis, B., Palz, W., Ossenbrink, H.A., Helm, P., (James & James, London), p. 1679 (2000).Google Scholar
10. Sato, N., K. Sakaguchi, Yamagata, K., Fujiyama, Y., and Yonehara, T., J. Electrochem. Soc. 142, 3116 (1995).Google Scholar
11. Rinke, T. J., Bergmann, R. B., Brüggemann, R., and Werner, J. H., Ultrathin quasi-monocrystalline silicon films for electronic devices, Solid State Phenomena 67–68, 229 (1999).Google Scholar
12. Kuchler, G., Scholten, D., Müller, G., Krinke, J., Auer, R., and Brendel, R., Fabrication of textured monocrystalline Si-films using the porous silicon (PSI)-process, in Proc. 16th European Photovoltaic Solar Energy Conf., ed. by Scheer, H., McNelis, B., Palz, W., Ossenbrink, H. A., and Helm, P. (James & James, London, 2000), p. 1695.Google Scholar
13. Auer, R., Gazuz, V., Ackermann, J., Kintzel, W., Brendel, R., and Schulz, M., Large area plasma processes for internally series connected thin-film silicon solar cells, in Proc. 16th European photovoltaic Solar Energy Conf.; ed. by Scheer, H., McNells, B., Palz, W., Ossenbrink, H. A., and Helm, P.; James & James: London, 2000; 1691.Google Scholar