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The Structure of GaAs/Si(211) Heteroepitaxial Layers

Published online by Cambridge University Press:  28 February 2011

Zuzanna Liliental-Weber ,
E.R. Weber ,
J. Washburn ,
T.Y. Liu  and
H. Kroemer
Zuzanna Liliental-Weber
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
E.R. Weber
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
T.Y. Liu
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
H. Kroemer
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface.

Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505°C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (∼;5×l07/cm2) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates [8]. Applying three sets of the same strained layersdecreased the density of dislocations an additional ∼2/3 times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 91
Copyright
Copyright © Materials Research Society 1987

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References

1. Fischer, R., Henderson, T., Klem, J., Masselink, W.T., Kopp, W., Morkoc, H. and Litton, C.W., Electronics Letters 20, 945 (1984).Google Scholar
2 Uppal, P.N. and Kroemer, H., J. Appl. Phys. 58, 2195 (1985).Google Scholar
3. Nonaka, T., Akiyama, M., Kawarada, Y. and Kaminski, K., Jpn. J. Appl. Phys. 23, L919 (1984).Google Scholar
4. Fischer, R., Kopp, W.F., Gedymin, J.S. and Morkoc, H., IEEE Transactions on Electron Devices ED33, 1407 (1986).Google Scholar
5. Kroemer, H., Mat. Res. Soc. Symp. vol. 67 (1986), p. 3.Google Scholar
6. Akiyama, M., Kawarada, Y., Nishi, S., Ueda, T. and Kaminishi, K., Mat. Res. Soc. Symp. p. 53.Google Scholar
7. Fischer, R., Neuman, D., Zabel, H., Morkoc, H., Choi, C. and Otsuka, N., Appl. Phys. Lett. 48, 1223 (1986).Google Scholar
8. Lee, J.W., Schichijo, H., Tsai, H.L. and Matyi, R.J., Appl. Phys. Lett. 50, 31 (1987).Google Scholar
9. Ishizaka, A., Nakagawa, N. and Shiraki, Y. in Proceedings of the 2nd International Symposium on Molecular Beam Epitaxy, Tokyo 1982, p. 183, Jpn. Soc. of Appl. Phys.Google Scholar
10. Otsuka, N., Choi, C., Nakamura, Y., Nagakuva, S., Fischer, F., Peng, C.K. and Morkoc, H., Mat. Res. Soc. Symp. Proc. vol. 67, p. 85 (1986).Google Scholar
11. Ahearn, J.S. and Uppal, P., Mat. Res. Soc. Symp. Proc. vol. 91 - this Proceedings.Google Scholar
12. Lee, J.W., Salerno, J.P., Hsu, C.C., Gale, R.P. and Fan, J.C.C., Mat. Res. Soc. Symp. Proc. vol. 91 - this Proceedings.Google Scholar
13. Lo, Y.H., Charasse, M.N., Yu, P., Huang, Y., Liliental-Weber, Z., Werner, M. and Wang, S., Mat. Res. Soc. Symp. Proc. vol. 91 - this Proceedings.Google Scholar